Impact of Bottom Interfacial Layer on the Threshold Voltage and Device Reliability of Fluorine Incorporated PMOSFETS with High-K/Metal Gate von Kisik Choi, Taeho Lee, Barnett, J., Harris, H.R., Seungsoo Kweon, Young, C., Bersuker, G., Choi, R., Seung Chul Song, Byoung Hun Lee, Jammy, R.

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