Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures von Buyanov, A.V., Bergman, J.P., Sandberg, J.A., Sernelius, B.E., Holtz, P.O., Dalfors, J., Monemar, B., Amano, H., Akasaki, I.

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Forces between air-bubbles in electrolyte solution von Lima, E.R.A., Boström, M., Sernelius, B.E., Horinek, D., Netz, R.R., Biscaia, E.C., Kunz, W., Tavares, F.W.

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Strong enhancement of dispersion forces from microwave radiation von Sernelius, B. E

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Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H–SiC and Si von Persson, C., Lindefelt, U., Sernelius, B.E.

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Unravelling the free electron behavior in InN von Darakchieva, V., Hofmann, T., Schubert, M., Sernelius, B.E., Giuliani, F., Xie, M.-Y., Persson, P.O.A., Monemar, B., Schaff, W.J., Hsiao, C.-L., Chen, L.-C., Nanishi, Y.

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Reactively sputtered ZnO: Al films for energy-efficient windows von Jin, Z.-C., Hamberg, I., Granqvist, C.G., Sernelius, B.E., Berggren, K.-F.

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Weakly localized transport in modulation-doped GaN/AlGaN heterostructures von Buyanov, A.V, Sandberg, J.A, Sernelius, B.E, Holtz, P.O, Bergman, J.P, Monemar, B, Amano, H, Akasaki, I

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Radiative Recombination in InGaN/GaN Multiple Quantum Wells von Holtz, P.O., Amano, Hiroshi, Sernelius, B.E., Bergman, Peder, Pozina, G.R., Akasaki, Isamu, Monemar, Bo

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Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells von Ferreira, A.C., Buyanov, A.V., Holtz, P.O., Sernelius, B.E., Monemar, B., Mauritz, O., Ekenberg, U., Sundaram, M., Campman, K., Merz, J.L., Gossard, A.C.

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Optical studies of acceptor centre doped [formula omitted] quantum wells von Ferreira, A.C., Holtz, P.O., Sernelius, B.E., Buyanov, A., Monemar, B., Ekenberg, U., Mauritz, O., Sundaram, M., Campman, K., Merz, J.L., Gossard, A.C.

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Radiative recombination in In 0.15 Ga 0.85 N/GaN multiple quantum well structures von Monemar, B., Bergman, J. P., Dalfors, J., Pozina, G., Sernelius, B.E., Holtz, P.O., Amano, H., Akasaki, I.

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Band-gap tailoring of ZnO by means of heavy Al doping von SERNELIUS, B. E, BERGGREN, K.-F, JIN, Z.-C, HAMBERG, I, GRANQVIST, C. G

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Temperature-dependent resistivity of heavily doped silicon and germanium von SERNELIUS, B. E

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Very heavily doped semiconductors as a “nearly-free-electron-gas” system von Berggren, K.-F., Sernelius, B.E.

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Band-gap shifts in heavily p-type doped semiconductors of the zinc-blende and diamond type von SERNELIUS, B. E

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Band-gap shifts in heavily doped n-type GaAs von SERNELIUS, B. E

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Free-carrier absorption from Fibonacci sequences of delta -doped layers in silicon von Sernelius, BE

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Variation of the electron effective mass with ionic scattering in silicon inversion layers von Sernelius, B.E., Berggren, K.-F.

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Variation of the electron effective mass with ionic scattering in silicon inversion layers von Sernelius, B.E., Berggren, K.-F.

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Polaron in n dimensions von SERNELIUS, B. E

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