Phonon frequency variations in high quality InAs1−xSbx epilayers grown on GaAs von Erkuş, M., Serincan, U.

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Structural and optical properties of porous nanocrystalline Ge von Kartopu, G., Sapelkin, A. V., Karavanskii, V. A., Serincan, U, Turan, R

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Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure von Arpapay, B., Şahin, S., Arıkan, B., Serincan, U.

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Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy von Serincan, U ur, Arpapay, Burcu

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Phonon frequency variations in high quality InAs1-x Sb x epilayers grown on GaAs von Erkus, M, Serincan, U

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A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy von Arpapay, Burcu, Suyolcu, Y Eren, Çorapç o lu, Gülcan, van Aken, Peter A, Gülgün, Mehmet Ali, Serincan, U ur

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Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation von Kulakci, M, Serincan, U, Turan, R

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Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array von Korkmaz, Melih, Arikan, Bulent, Suyolcu, Y Eren, Aslan, Bulent, Serincan, U ur

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Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate von Erkus, M., Senel, O., Serincan, U.

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Spatial distribution of light-emitting centers in Si-implanted SiO2 von SERINCAN, U, AYGUN, G, TURAN, R

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Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence? von Kartopu, G., Karavanskii, V. A., Serincan, U., Turan, R., Hummel, R. E., Ekinci, Y., Gunnæs, A., Finstad, T. G.

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Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy von Serincan, U, Kartopu, G, Guennes, A, Finstad, T G, Turan, R, Ekinci, Y, Bayliss, S C

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Comparative evaluation of InAs GaSb superlattices for mid infrared detection: p-i-n versus residual doping von Korkmaz, Melih, Kaldirim, Melih, Arikan, Bulent, Serincan, U ur, Aslan, Bulent

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Scanning probe measurements on luminescent Si nanoclusters in SiO2 films von MAYANDI, J, FINSTAD, T. G, THOGERSEN, A, FOSS, S, SERINCAN, U, TURAN, R

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Introduction of Si∕SiO2 interface states by annealing Ge-implanted films von Marstein, E. S., Gunnæs, A. E., Olsen, A., Finstad, T. G., Turan, R., Serincan, U.

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Ion beam synthesized luminescent Si nanocrystals embedded in SiO2 films and the role of damage on nucleation during annealing von MAYANDI, J, FINSTAD, T. G, FOSS, S, THOGERSEN, A, SERINCAN, U, TURAN, R

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Luminescence from silicon nanoparticles in SiO2: atomic force microscopy and transmission electron microscopy studies von Mayandi, J, Finstad, T G, Foss, S, Thøgersen, A, Serincan, U, Turan, R

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The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates von Arpapay, B., Serincan, U.

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Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films von Marstein, E.S, Gunnæs, A.E, Serincan, U, Turan, R, Olsen, A, Finstad, T.G

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Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes von Tansel, T., Kutluer, K., Salihoglu, O., Aydinli, A., Aslan, B., Arikan, B., Kilinc, M. C., Ergun, Y., Serincan, U., Turan, R.

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