Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy von Serincan, U ur, Arpapay, Burcu

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Convex-like GaAs nanowires grown on Si (111) substrates von Arpapay, Burcu, Serincan, Uğur

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A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy von Arpapay, Burcu, Suyolcu, Y Eren, Çorapç o lu, Gülcan, van Aken, Peter A, Gülgün, Mehmet Ali, Serincan, U ur

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Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array von Korkmaz, Melih, Arikan, Bulent, Suyolcu, Y Eren, Aslan, Bulent, Serincan, U ur

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Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy von Arpapay, Burcu, Duygulu, Özgür, Serincan, Uğur

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Random alloy growth of AlAs0.08Sb0.92 on GaSb under high Group-V flux condition von Arpapay, Burcu, Ergürhan, Ayşe Aygül, Erenoğlu, Sabahattin Erinç, Alaydin, Behçet Özgür, Kulakcı, Mustafa, Serincan, Uğur

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Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces von Arikan, Bulent, Korkmaz, Melih, Aslan, Bulent, Serincan, Uğur

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Comparative evaluation of InAs GaSb superlattices for mid infrared detection: p-i-n versus residual doping von Korkmaz, Melih, Kaldirim, Melih, Arikan, Bulent, Serincan, U ur, Aslan, Bulent

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Synthesis of Plant-Mediated Silver Nanoparticles Using Dioscorea batatas Rhizome Extract and Evaluation of Their Antimicrobial Activities von Nagajyothi, P. C., Lee, K. D.

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Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes von Tansel, T., Kutluer, K., Salihoglu, O., Aydinli, A., Aslan, B., Arikan, B., Kilinc, M. C., Ergun, Y., Serincan, U., Turan, R.

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Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure von Sonmez, Feyza, Ardali, Sukru, Arpapay, Burcu, Serincan, Ugur, Tiras, Engin

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Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate von Serincan, Uğur, Arikan, Bulent, Şenel, Onur

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Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix von JIWEI WANG, RIGHINI, Marcofabio, GNOLI, Andrea, FOSS, Steinar, FINSTAD, Terje, SERINCAN, Ugur, TURAN, Rasit

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Nonlinear Electrical Conductivity Properties of Au Films Prepared by Sputtering von Yin, Ziwen, Zhai, Xiaoyu, Kang, Yixin, Meng, Qingyun, Yan, Dongpeng

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Nanoindentation and Adhesion Properties of Ta Thin Films von Chen, Yuan-Tsung

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Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM von Lee, Meng Chuan, Wong, Hin Yong

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Light Logic Gates with GaAs‐Based Structures von Sonmez, Feyza, Ardali, Sukru, Arpapay, Burcu, Mutlu, Selman, Ergurhan, Ayse Aygul, Senel, Onur, Serincan, Ugur, Erol, Ayse, Tiras, Engin

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Control the Morphologies and the Pore Architectures of Mesoporous Silicas through a Dual-Templating Approach von Li, Baozong, Wang, Sibing, Xu, Zhen, Chen, Hao, Wang, Hairui, Li, Yi

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Light Logic Gates with GaAs‐Based Structures von Sonmez, Feyza, Ardali, Sukru, Arpapay, Burcu, Mutlu, Selman, Ergurhan, Ayse Aygul, Senel, Onur, Serincan, Ugur, Erol, Ayse, Tiras, Engin

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On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses von Arikan, Bulent, Korkmaz, Guven, Suyolcu, Yusuf Eren, Aslan, Bulent, Serincan, Ugur

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