The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications von Kim, Taeho, Kim, Giuk, Lee, Young Kyu, Ko, Dong Han, Hwang, Junghyeon, Lee, Sangho, Shin, Hunbeom, Jeong, Yeongseok, Jung, Seong‐Ook, Jeon, Sanghun

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Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS von Taehui Na, Byungkyu Song, Jung Pill Kim, Kang, Seung H., Seong-Ook Jung

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Power-Gated 9T SRAM Cell for Low-Energy Operation von Oh, Tae Woo, Jeong, Hanwool, Kang, Kyoman, Park, Juhyun, Yang, Younghwi, Jung, Seong-Ook

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A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area von Song, Byungkyu, Na, Taehui, Kim, Jung Pill, Kang, Seung H., Jung, Seong-Ook

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Current Measurement Transducer Based on Current-to-Voltage-to-Frequency Converting Ring Oscillator with Cascade Bias Circuit von Park, Jongha, Park, Jung-Hyun, Jung, Seong-Ook

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Comparative Study of Various Latch-Type Sense Amplifiers von Woo, Seung-Han, Kim, Jisu, Jeong, Hanwool, Jung, Seong-Ook

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A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM) von Jisu Kim, Kyungho Ryu, Kang, S. H., Seong-Ook Jung

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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology von Younghwi Yang, Juhyun Park, Seung Chul Song, Wang, Joseph, Yeap, Geoffrey, Seong-Ook Jung

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One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation von Cho, Keonhee, Park, Juhyun, Oh, Tae Woo, Jung, Seong-Ook

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Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM von Taehui Na, Jisu Kim, Jung Pill Kim, Kang, Seung H., Seong-Ook Jung

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A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop von Kyungho Ryu, Jisu Kim, Jiwan Jung, Jung Pill Kim, Kang, S. H., Seong-Ook Jung

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Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM von Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Kang, Seung H., Seong-Ook Jung

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Bitline Charge Sharing Suppressed Bitline and Cell Supply Collapse Assists for Energy-Efficient 6T SRAM von Kim, Kiryong, Oh, Tae Woo, Jung, Seong-Ook

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STT-MRAM Sensing: A Review von Na, Taehui, Kang, Seung H., Jung, Seong-Ook

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All-Bit-Line Read Scheme With Locking Bit-Line and Amplifying Sense Node in NAND Flash von An, Jun Ho, Chun, Jin Young, Park, Hyun Kook, Jung, Seong-Ook

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Pre-Charged Local Bit-Line Sharing SRAM Architecture for Near-Threshold Operation von Oh, Tae Woo, Jeong, Hanwool, Park, Juhyun, Jung, Seong-Ook

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Slope Interconnect Effort: Gate-Interconnect Interdependent Delay Modeling for Early CMOS Circuit Simulation von Myeong-Eun Hwang, Seong-Ook Jung, Roy, K.

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High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops von Kim, Sekeon, Oh, Tae Woo, Lim, Sehee, Ko, Dong Han, Jung, Seong-Ook

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Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM von Taehui Na, Jung Pill Kim, Kang, Seung H., Seong-Ook Jung

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Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells von Ko, Dong Han, Oh, Tae Woo, Lim, Sehee, Kim, Sekeon, Jung, Seong-Ook

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