III-Nitride Based Light Emitting Diodes and Applications

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Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films von Kim, Tae-Youb, Park, Nae-Man, Kim, Kyung-Hyun, Sung, Gun Yong, Ok, Young-Woo, Seong, Tae-Yeon, Choi, Cheol-Jong

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Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride von Park, N M, Choi, C J, Seong, T Y, Park, S J

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Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n -type ZnO von Kim, Sang-Ho, Kim, Han-Ki, Seong, Tae-Yeon

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Fabrication of ZnO quantum dots embedded in an amorphous oxide layer von Kim, Kyoung-Kook, Koguchi, Nobuyuki, Ok, Young-Woo, Seong, Tae-Yeon, Park, Seong-Ju

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Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO von Kim, Sang-Ho, Kim, Han-Ki, Seong, Tae-Yeon

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Ohmic and degradation mechanisms of Ag contacts on p -type GaN von Song, June-O, Kwak, Joon Seop, Park, Yongjo, Seong, Tae-Yeon

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Formation of low resistance nonalloyed Al/Pt ohmic contacts on n -type ZnO epitaxial layer von Kim, Han-Ki, Kim, Kyoung-Kook, Park, Seong-Ju, Seong, Tae-Yeon, Adesida, Ilesanmi

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High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing von Kim, Kyoung-Kook, Niki, Shigeru, Oh, Jin-Yong, Song, June-O, Seong, Tae-Yeon, Park, Seong-Ju, Fujita, Shizuo, Kim, Sang-Woo

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Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes von Kim, Han-Ki, Kim, D.-G., Lee, K.-S., Huh, M.-S., Jeong, S. H., Kim, K. I., Seong, Tae-Yeon

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Highly low resistance and transparent Ni/ZnO ohmic contacts to p -type GaN von Song, June O, Kim, Kyoung-Kook, Park, Seong-Ju, Seong, Tae-Yeon

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Schottky barrier characteristics of Pt contacts to n -type InGaN von Jang, Ja-Soon, Kim, Donghwan, Seong, Tae-Yeon

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Growth of nominally undoped p -type ZnO on Si by pulsed-laser deposition von Oh, Min-Suk, Kim, Sang-Ho, Seong, Tae-Yeon

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Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes von Song, June-O, Seong, Tae-Yeon

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Electrochemical and structural properties of radio frequency sputtered cobalt oxide electrodes for thin-film supercapacitors von Kim, Han-Ki, Seong, Tae-Yeon, Lim, Jae-Hong, Ii Cho, Won, Soo Yoon, Young

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Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots von Park, Il-Kyu, Kwon, Min-Ki, Baek, Sung-Ho, Ok, Young-Woo, Seong, Tae-Yeon, Park, Seong-Ju, Kim, Yoon-Seok, Moon, Yong-Tae, Kim, Dong-Joon

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Cu -doped indium oxide∕Ag ohmic contacts for high-power flip-chip light-emitting diodes von Song, June-O, Kwak, Joon Seop, Seong, Tae-Yeon

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Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes von Song, June-O, Kwak, J. S., Park, Y., Seong, Tae-Yeon

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Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers von Ashrafi, A. B. M. Almamun, Ueta, Akio, Avramescu, Adrian, Kumano, Hidekazu, Suemune, Ikuo, Ok, Young-Woo, Seong, Tae-Yeon

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Low-resistance Pt/Ni/Au ohmic contacts to p -type GaN von Jang, Ja-Soon, Chang, In-Sik, Kim, Han-Ki, Seong, Tae-Yeon, Lee, Seonghoon, Park, Seong-Ju

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