A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures von Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam

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Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer von Pi, Ung Hwan, Won Kim, Kee, Bae, Ji Young, Lee, Sung Chul, Cho, Young Jin, Kim, Kwang Seok, Seo, Sunae

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Robust graphene wet transfer process through low molecular weight polymethylmethacrylate von Kim, Seonyeong, Shin, Somyeong, Kim, Taekwang, Du, Hyewon, Song, Minho, Lee, ChangWon, Kim, Kisoo, Cho, Seungmin, Seo, David H., Seo, Sunae

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Random Circuit Breaker Network Model for Unipolar Resistance Switching von Chae, Seung Chul, Lee, Jae Sung, Kim, Sejin, Lee, Shin Buhm, Chang, Seo Hyoung, Liu, Chunli, Kahng, Byungnam, Shin, Hyunjung, Kim, Dong-Wook, Jung, Chang Uk, Seo, Sunae, Lee, Myoung-Jae, Noh, Tae Won

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Observation of electric-field induced Ni filament channels in polycrystalline NiOx film von Park, Gyeong-Su, Li, Xiang-Shu, Kim, Dong-Chirl, Jung, Ran-Ju, Lee, Myoung-Jae, Seo, Sunae

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Robust bi-stable memory operation in single-layer graphene ferroelectric memory von Song, Emil B., Lian, Bob, Min Kim, Sung, Lee, Sejoon, Chung, Tien-Kan, Wang, Minsheng, Zeng, Caifu, Xu, Guangyu, Wong, Kin, Zhou, Yi, Rasool, Haider I., Seo, David H., Chung, Hyun-Jong, Heo, Jinseong, Seo, Sunae, Wang, Kang L.

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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics von Lee, Young Gon, Kang, Chang Goo, Jung, Uk Jin, Kim, Jin Ju, Hwang, Hyeon Jun, Chung, Hyun-Jong, Seo, Sunae, Choi, Rino, Lee, Byoung Hun

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Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition von Kim, Yong Seung, Lee, Jae Hong, Kim, Young Duck, Jerng, Sahng-Kyoon, Joo, Kisu, Kim, Eunho, Jung, Jongwan, Yoon, Euijoon, Park, Yun Daniel, Seo, Sunae, Chun, Seung-Hyun

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The structural and electrical evolution of graphene by oxygen plasma-induced disorder von Kim, Dong Chul, Jeon, Dae-Young, Chung, Hyun-Jong, Woo, YunSung, Shin, Jai Kwang, Seo, Sunae

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The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects von Kim, Dahye, Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Seonyeong, Song, Minho, Lee, ChangWon, Lee, Jaeung, Cheong, Hyeonsik, Seo, David H., Seo, Sunae

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Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices von Lee, Sejoon, Song, Emil B., Kim, Sungmin, Seo, David H., Seo, Sunae, Won Kang, Tae, Wang, Kang L.

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Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition von Jeon, Insu, Yang, Heejun, Lee, Sung-Hoon, Heo, Jinseong, Seo, David H, Shin, Jaikwang, Chung, U-In, Kim, Zheong Gou, Chung, Hyun-Jong, Seo, Sunae

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Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition von Iqbal, M. Z., Kumar Singh, Arun, Iqbal, M. W., Seo, Sunae, Eom, Jonghwa

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Interaction and ordering of vacancy defects in NiO von Park, Sohee, Ahn, Hyo-Shin, Lee, Choong-Ki, Kim, Hanchul, Jin, Hosub, Lee, Hyo-Sug, Seo, Sunae, Yu, Jaejun, Han, Seungwu

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Formation of unconventional standing waves at graphene edges by valley mixing and pseudospin rotation von Park, Changwon, Yang, Heejun, Mayne, Andrew J, Dujardin, Gérald, Seo, Sunae, Kuk, Young, Ihm, Jisoon, Kim, Gunn

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Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures von Park, Chanwoo, Jeon, Sang Ho, Chae, Seung Chul, Han, Seungwu, Park, Bae Ho, Seo, Sunae, Kim, Dong-Wook

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Graphene Interconnect Lifetime: A Reliability Analysis von Xiangyu Chen, Seo, D. H., Sunae Seo, Hyunjong Chung, Wong, H.-S Philip

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Metallic nanowire-graphene hybrid nanostructures for highly flexible field emission devices von Arif, Muhammad, Heo, Kwang, Lee, Byung Yang, Lee, Joohyung, Seo, David H, Seo, Sunae, Jian, Jikang, Hong, Seunghun

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Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors von Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Dahye, Kim, Hakseong, Sung, Ji Ho, Lee, Myoung Jae, Seo, David H., Lee, Sang Wook, Jo, Moon-Ho, Seo, Sunae

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Low temperature growth of complete monolayer graphene films on Ni-doped copper and gold catalysts by a self-limiting surface reaction von Woo, Yun Sung, Seo, David H., Yeon, Dong-Hee, Heo, Jinseong, Chung, Hyun-Jong, Benayad, Anass, Chung, Jae-Gwan, Han, Hyouksoo, Lee, Hyo-Sug, Seo, Sunae, Choi, Jae-Young

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