Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices von Senkader, S., Wright, C. D.

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Oxygen-dislocation interactions in silicon at temperatures below 700 °C: Dislocation locking and oxygen diffusion von Senkader, S., Wilshaw, P. R., Falster, R. J.

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Enhanced oxygen diffusion in highly doped p -type Czochralski silicon von Murphy, J. D., Wilshaw, P. R., Pygall, B. C., Senkader, S., Falster, R. J.

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Onset of slip in silicon containing oxide precipitates von Jurkschat, K., Senkader, S., Wilshaw, P. R., Gambaro, D., Falster, R. J.

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Oxygen and Nitrogen Transport in Silicon Investigated by Dislocation Locking Experiments von Giannattasio, A., Murphy, J. D., Senkader, S., Falster, R. J., Wilshaw, P. R.

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Dislocation locking by nitrogen impurities in FZ-silicon von Giannattasio, A., Senkader, S., Falster, R.J., Wilshaw, P.R.

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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments von Murphy, J.D., Senkader, S., Falster, R.J., Wilshaw, P.R.

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Generation of dislocation glide loops in Czochralski silicon von Giannattasio, A, Senkader, S, Falster, R J, Wilshaw, P R

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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments von Murphy, J. D., Giannattasio, A., Senkader, S., Falster, R. J., Wilshaw, P. R.

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On the dislocation–oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures von Senkader, S, Giannattasio, A, Falster, R J, Wilshaw, P R

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Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking von Alpass, C. R., Murphy, J. D., Giannattasio, A., Senkader, S., Falster, R. J., Wilshaw, P. R.

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The role of dislocations in producing efficient near-bandgap luminescence from silicon von Fraser, K., Stowe, D., Galloway, S., Senkader, S., Falster, R., Wilshaw, P.

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The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers von Giannattasio, A., Senkader, S., Azam, S., Falster, R.J., Wilshaw, P.R.

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Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures von Falster, Robert J., Giannattasio, A., Wilshaw, Peter R., Senkader, Semih

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Near-band gap luminescence at room temperature from dislocations in silicon von Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J., Wilshaw, P.R.

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Computer simulation of oxygen precipitation in Czochralski-grown silicon during HI-LO-HI anneals von ESFANDYARI, J, SCHMEISER, C, SENKADER, S, HOBLER, G, MURPHY, B

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Determination of the oxide-precipitate–silicon-matrix interface energy by considering the change of precipitate morphology von Senkader, S., Hobler, G., Schmeiser, C.

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A model for oxygen precipitation in silicon including bulk stacking fault growth von Senkader, S., Esfandyari, J., Hobler, G.

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Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers von Ghaderi, Ali, Senkader, Semih

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The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon von Falster, Robert J., Giannattasio, A., Murphy, John D., Alpass, Charles R., Wilshaw, Peter R., Senkader, Semih

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