Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs von Preobrazhenskii, V.V, Putyato, M.A, Pchelyakov, O.P, Semyagin, B.R

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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy von Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

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Experimental observation of interface-phonon-plasmon mode in n-GaAs/i-GaAs heterostructure von Volodin, V.A., Sinyukov, M.P., Semyagin, B.R., Putyato, M.A., Preobrazhenskiy, V.V.

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Growth, spectroscopy and high power laser operation of Yb:YAl3(BO3)4 crystal: Continuous-wave, mode-locking and chirped pulse regenerative amplification von Rudenkov, A.S., Kisel, V.E., Gorbachenya, K.N., Yasukevich, A.S., Maltsev, V.V., Leonyuk, N.I., Rubtsova, N.N., Semyagin, B.R., Kovalyov, A.A., Preobrazhenskii, V.V., Kuleshov, N.V.

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Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence von Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Molecular beam epitaxy of III-[P.sub.x][As.sub.1-x] solid solutions: mechanism of composition formation in the sublattice of a Group V element von Emelyanov, E.A, Putyato, M.A, Semyagin, B.R, Feklin, D.F, Preobrazhensky, V.V

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Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials von Ushanov, V. I., Chaldyshev, V. V., Bert, N. A., Nevedomsky, V. N., Il’inskaya, N. D., Lebedeva, N. M., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Fröhlich resonance in the AsSb/AlGaAs system von Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells von Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M. A., Emelyanov, E. A., Preobrazhenskii, V. V., Gavrilenko, V. I.

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Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhernskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions von Lukin, P. V., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

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New system of self-assembled GaSb/GaP quantum dots von Abramkin, D. S., Putyato, M. A., Gutakovskii, A. K., Semyagin, B. R., Preobrazhenskii, V. V., Shamirzaev, T. S.

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Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism von Cherkashin, N. A., Claverie, A., Bonafos, C., Chaldyshev, V. V., Bert, N. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

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115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber von Kovalyov, A.A., Preobrazhenskii, V.V., Putyato, M.A., Pchelyakov, O.P., Rubtsova, N.N., Semyagin, B.R., Kisel', V.E., Kuril'chik, S.V., Kuleshov, N.V.

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Electron microscopy of GaAs Structures with InAs and as quantum dots von Nevedomskii, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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