Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN von Semmelroth, K., Berwian, P., Schröter, C., Leibiger, G., Schönleber, M., Friedrich, J.

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Growth of SiC polytypes by the physical vapour transport technique von Semmelroth, K, Schulze, N, Pensl, G

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Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy von Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Schmid, F., Pensl, G., Nagasawa, H.

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Impurity Conduction Observed in Al-Doped 6H-SiC von Pensl, Gerhard, Semmelroth, Kurt, Krieger, M.

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Growth of cubic SiC single crystals by the physical vapor transport technique von Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Püsche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P.

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Ionization Energies of Phosphorus Donors in 6H-SiC von Pensl, Gerhard, Semmelroth, Kurt, Schmid, Frank, Krieger, M., Weber, Heiko B., Haller, Eugene E.

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Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy von Pensl, Gerhard, Nagasawa, Hiroyuki, Hundhausen, Martin, Schmid, Frank, Ley, Lothar, Semmelroth, Kurt, Püsche, Roland

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Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method von Pensl, Gerhard, Maier, Manfred, Greulich-Weber, Siegmund, Schmid, Frank, Karg, D., Spaeth, Johann Martin, Semmelroth, Kurt

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Growth of 3C-SiC Bulk Material by the Modified Lely Method von Pensl, Gerhard, Nagasawa, Hiroyuki, Hundhausen, Martin, Strunk, Horst P., Krieger, M., Semmelroth, Kurt, Ley, Lothar, Nerding, M., Püsche, Roland

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Microstructure of Cubic SiC Grown by the Modified Lely-Method von Pensl, Gerhard, Nagasawa, Hiroyuki, Semmelroth, Kurt, Strunk, Horst P., Nerding, M.

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Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy von Pensl, Gerhard, Hundhausen, Martin, Herzog, B., Ley, Lothar, Semmelroth, Kurt, Rohmfeld, S., Püsche, Roland

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Resistivity of Ultrathin (0.6-3.7 nm) IrSi Films on Si(100) von Grünleitner, H., Semmelroth, K., Schulz, M.

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Growth of SiC polytypes by the physical vapour transport technique : Silicon carbide von SEMMELROTH, K, SCHULZE, N, PENSL, G

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Electrical and Optical Characterization of SiC von Pensl, Gerhard, Nagasawa, Hiroyuki, Laube, Michael, Schöner, Adolf, Schulze, Norbert, Schmid, Frank, Ciobanu, Florin, Semmelroth, Kurt, Wagner, Günter, Reshanov, Sergey A.

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New Aspects in n-type Doping of SiC with Phosphorus von Pensl, Gerhard, Rauls, E., Semmelroth, Kurt, Greulich-Weber, Siegmund, Gerstmann, Uwe, Haller, Eugene E.

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Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) von Pensl, Gerhard, Acartürk, T., Semmelroth, Kurt, Starke, Ulrich, Saddow, Stephen E.

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Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method von Pensl, Gerhard, Laube, Michael, Schulze, Norbert, Semmelroth, Kurt, Gajowski, Jürgen

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Phosphorus-Related Centers in SiC von Laube, M., Schmid, F., Semmelroth, K., Pensl, G., Devaty, R. P., Choyke, W. J., Wagner, G., Maier, M.

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Impurity Conduction in Silicon Carbide von Pensl, Gerhard, Rambach, Martin, Semmelroth, Kurt, Frey, Lothar, Krieger, M., Weber, Heiko B.

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