General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors von Mele, L. J., Palestri, P., Selmi, L.

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Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays von Laborde, C., Pittino, F., Verhoeven, H. A., Lemay, S. G., Selmi, L., Jongsma, M. A., Widdershoven, F. P.

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Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes von Tondelli, L., Asanovski, R., Scholten, A. J., Dinh, T. V., Tam, S.-W., Pijper, R. M. T., Selmi, L.

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Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors von Pittino, F., Palestri, P., Scarbolo, P., Esseni, D., Selmi, L.

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis von Asanovski, R., Arimura, H., de Marneffe, J.-F., Palestri, P., Horiguchi, N., Kaczer, B., Selmi, L., Franco, J.

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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs von Conzatti, F., Pala, M. G., Esseni, D., Bano, E., Selmi, L.

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Zero‐fluoroscopy permanent pacemaker implantation using Ensite NavX system: Clinical viability or fanciful technique? von Guo, Ping, Qiu, Jie, Wang, Yan, Chen, Guangzhi, Proietti, Riccardo, Fadhle, AL‐Selmi, Zhao, Chunxia, Wen Wang, Dao

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Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain von Palestri, P., Esseni, D., Eminente, S., Fiegna, C., Sangiorgi, E., Selmi, L.

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Nanoscale MOS Transistors: Semi-Classical Transport and Applications von Esseni, David, Palestri, Pierpaolo, Selmi, Luca

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Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs von Esseni, D., Abramo, A., Selmi, L., Sangiorgi, E.

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Modeling, simulation and design of the vertical Graphene Base Transistor von Driussi, F., Palestri, P., Selmi, L.

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On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks von Toniutti, P., Palestri, P., Esseni, D., Driussi, F., De Michielis, M., Selmi, L.

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation von Lenzi, M., Palestri, P., Gnani, E., Reggiani, S., Gnudi, A., Esseni, D., Selmi, L., Baccarani, G.

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Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs von Lucci, L., Palestri, P., Esseni, D., Bergagnini, L., Selmi, L.

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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions von Pilotto, A., Palestri, P., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Driussi, F., Menk, R. H., Nichetti, C., Steinhartova, T.

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On the Apparent Mobility in Nanometric n-MOSFETs von Zilli, M., Esseni, D., Palestri, P., Selmi, L.

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On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices von Clerc, R., Palestri, P., Selmi, L.

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Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model von Bresciani, M., Palestri, P., Esseni, D., Selmi, L., Szafranek, B., Neumaier, D.

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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection von Pilotto, A., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Cautero, M., Colja, M., Driussi, F., Esseni, D., Menk, R.H., Nichetti, C., Rosset, F., Selmi, L., Steinhartova, T., Palestri, P.

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Mobility extraction in SOI MOSFETs with sub 1 nm body thickness von Schmidt, M., Lemme, M.C., Gottlob, H.D.B., Driussi, F., Selmi, L., Kurz, H.

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