Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer von Liu, H. Y., Sellers, I. R., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Groom, K. M., Gutiérrez, M., Hopkinson, M., Ng, J. S., David, J. P. R., Beanland, R.

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Defect mediated extraction in InAs/GaAs quantum dot solar cells von Willis, S.M., Dimmock, J.A.R., Tutu, F., Liu, H.Y., Peinado, M.G., Assender, H.E., Watt, A.A.R., Sellers, I.R.

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The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs von Brown, C. R, Estes, N. J, Whiteside, V. R, Wang, B, Hossain, K, Golding, T. D, Leroux, M, Al Khalfioui, M, Tischler, J. G, Ellis, C. T, Glaser, E. R, Sellers, I. R

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Carrier multiplication in bulk indium nitride von Jensen, S. A., Versluis, J., Cánovas, E., Pijpers, J. J. H., Sellers, I. R., Bonn, M.

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High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents von Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J., Skolnick, M.S.

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Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure von Liu, H. Y., Hopkinson, M., Harrison, C. N., Steer, M. J., Frith, R., Sellers, I. R., Mowbray, D. J., Skolnick, M. S.

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1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density von SELLERS, I. R, LIU, H. Y, GROOM, K. M, CHILDS, D. T, ROBBINS, D, BADCOCK, T. J, HOPKINSON, M, MOWBRAY, D. J, SKOLNICK, M. S

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Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon von Semond, F., Sellers, I. R., Natali, F., Byrne, D., Leroux, M., Massies, J., Ollier, N., Leymarie, J., Disseix, P., Vasson, A.

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Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures von Liu, H. Y., Sellers, I. R., Gutiérrez, M., Groom, K. M., Soong, W. M., Hopkinson, M., David, J. P. R., Beanland, R., Badcock, T. J., Mowbray, D. J., Skolnick, M. S.

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Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons von Tartakovskii, A. I., Makhonin, M. N., Sellers, I. R., Cahill, J., Andreev, A. D., Whittaker, D. M., Wells, J-P. R., Fox, A. M., Mowbray, D. J., Skolnick, M. S., Groom, K. M., Steer, M. J., Liu, H. Y., Hopkinson, M.

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Strong coupling of light with A and B excitons in GaN microcavities grown on silicon von Sellers, I. R., Semond, F., Leroux, M., Massies, J., Disseix, P., Henneghien, A-L., Leymarie, J., Vasson, A.

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Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity von Liu, H. Y., Sellers, I. R., Hopkinson, M., Harrison, C. N., Mowbray, D. J., Skolnick, M. S.

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Mechanism for improvements of optical properties of 1.3- μ m InAs ∕ GaAs quantum dots by a combined InAlAs - InGaAs cap layer von Liu, H. Y., Tey, C. M., Sellers, I. R., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Beanland, R., Hopkinson, M., Cullis, A. G.

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The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers von Walker, C.L., Sandall, I.C., Smowton, P.M., Sellers, I.R., Mowbray, D.J., Liu, H.Y., Hopkinson, M.

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1.3 μm lasers with AlInAs-capped self-assembled quantum dots von Sellers, I. R., Liu, H. Y., Hopkinson, M., Mowbray, D. J., Skolnick, M. S.

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Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities von Bejtka, K., Rizzi, F., Edwards, P. R., Martin, R. W., Gu, E., Dawson, M. D., Watson, I. M., Sellers, I. R., Semond, F.

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Infrared modulated interlevel spectroscopy of 1.3 μ m self-assembled quantum dot lasers using a free electron laser von Sellers, I. R., Mowbray, D. J., Badcock, T. J., Wells, J.-P. R., Phillips, P. J., Carder, D. A., Liu, H. Y., Groom, K. M., Hopkinson, M.

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Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate von Liu, H. Y., Sellers, I. R., Airey, R. J., Steer, M. J., Houston, P. A., Mowbray, D. J., Cockburn, J., Skolnick, M. S., Xu, B., Wang, Z. G.

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Radiation tolerance of GaAs1-xSbx solar cells von Afshari, H, Durant, BK, Thrasher, T, Abshire, L, Whiteside, VR, Chan, S, Kim, D, Hatch, S, Tang, M, McNatt, JS, Liu, H, McCartney, MR, Smith, DJ, Sellers, IR

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Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers von Sellers, I.R., Liu, H.Y., Badcock, T.J., Groom, K.M., Mowbray, D.J., Gutiérrez, M., Hopkinson, M., Skolnick, M.S.

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