Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes von Sang, Liwen, Ren, Bing, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Tanaka, Atsushi, Cho, Yujin, Harada, Yoshitomo, Nabatame, Toshihide, Sekiguchi, Takashi, Usami, Shigeyoshi, Honda, Yoshio, Amano, Hiroshi

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Influence of implanted Mg concentration on defects and Mg distribution in GaN von Kumar, Ashutosh, Yi, Wei, Uzuhashi, Jun, Ohkubo, Tadakatsu, Chen, Jun, Sekiguchi, Takashi, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Hono, Kazuhiro

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Stable single atomic silver wires assembling into a circuitry-connectable nanoarray von Chen, Yaxin, Tang, Daiming, Huang, Zhiwei, Liu, Xi, Chen, Jun, Sekiguchi, Takashi, Qu, Weiye, Chen, Junxiao, Xu, Dongrun, Bando, Yoshio, Hu, Xiaolei, Wang, Xiaoping, Golberg, Dmitri, Tang, Xingfu

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Improving the open-circuit voltage of Sn-based perovskite solar cells by band alignment at the electron transport layer/perovskite layer interface von Yokoyama, Tomoyasu, Nishitani, Yu, Miyamoto, Yumi, Kusumoto, Shohei, Uchida, Ryusuke, Matsui, Taisuke, Kawano, Kenji, Sekiguchi, Takashi, Kaneko, Yukihiro

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Acceptance characterization of electron detector in SEM using stainless steel sphere von Sekiguchi, Takashi, Yao, Yuanzhao, Sonoda, Ryosuke, Sohda, Yasunari

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Appearance of spectral dip in the cathodoluminescence spectrum of negatively charged nitrogen-vacancy centers in diamonds von Chen, Jun, Shinei, Chikara, Inoue, Junichi, Abe, Hiroshi, Ohshima, Takeshi, Sekiguchi, Takashi, Teraji, Tokuyuki

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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications von Du, Weijie, Baba, Masakazu, Toko, Kaoru, Hara, Kosuke O., Watanabe, Kentaro, Sekiguchi, Takashi, Usami, Noritaka, Suemasu, Takashi

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Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer von Uzuhashi, Jun, Chen, Jun, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Ohkubo, Tadakatsu, Sekiguchi, Takashi

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Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN von Kumar, Ashutosh, Yi, Wei, Ohkubo, Tadakatsu, Chen, Jun, Sekiguchi, Takashi, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Hono, Kazuhiro

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Effect of Rubidium for Thermal Stability of Triple-cation Perovskite Solar Cells von Matsui, Taisuke, Yokoyama, Tomoyasu, Negami, Takayuki, Sekiguchi, Takashi, Saliba, Michael, Grätzel, Michael, Segawa, Hiroshi

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Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays von Liu, Baodan, Yuan, Fang, Dierre, Benjamin, Sekiguchi, Takashi, Zhang, Song, Xu, Yongkuan, Jiang, Xin

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Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence von Wang, Peng, Yi, Wei, Chen, Jun, Ito, Shun, Cui, Can, Sekiguchi, Takashi

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Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique von Baba, Masakazu, Toh, Katsuaki, Toko, Kaoru, Saito, Noriyuki, Yoshizawa, Noriko, Jiptner, Karolin, Sekiguchi, Takashi, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

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Collection efficiency and acceptance maps of electron detectors for understanding signal detection on modern scanning electron microscopy von Agemura, Toshihide, Sekiguchi, Takashi

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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing von Uzuhashi, Jun, Chen, Jun, Kumar, Ashutosh, Yi, Wei, Ohkubo, Tadakatsu, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Sierakowski, Kacper, Bockowski, Michal, Sakurai, Hideki, Kachi, Tetsu, Sekiguchi, Takashi, Hono, Kazuhiro

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A novel and high brightness AlN:Mn2+ red phosphor for field emission displays von Wang, Xiao-Jun, Xie, Rong-Jun, Dierre, Benjamin, Takeda, Takashi, Suehiro, Takayuki, Hirosaki, Naoto, Sekiguchi, Takashi, Li, Huili, Sun, Zhuo

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Solubility and crystallographic facet tailoring of (GaN) 1−x (ZnO) x pseudobinary solid-solution nanostructures as promising photocatalysts von Li, Jing, Liu, Baodan, Yang, Wenjin, Cho, Yujin, Zhang, Xinglai, Dierre, Benjamin, Sekiguchi, Takashi, Wu, Aimin, Jiang, Xin

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Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization von Chen, Bin, Matsuhata, Hirofumi, Sekiguchi, Takashi, Ichinoseki, Kyouichi, Okumura, Hajime

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Thermal stress induced dislocation distribution in directional solidification of Si for PV application von Jiptner, Karolin, Gao, Bing, Harada, Hirofumi, Miyamura, Yoshiji, Fukuzawa, Masayuki, Kakimoto, Koichi, Sekiguchi, Takashi

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Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence von Yi, Wei, Chen, Jun, Higuchi, Seiji, Sekiguchi, Takashi

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