Reliability of power cycling for IGBT power semiconductor modules von Morozumi, A., Yamada, K., Miyasaka, T., Sumi, S., Seki, Y.

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Enhanced oxidation of ion-implanted Si-face of 6H-SiC von UENO, K, SEKI, Y

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Numerical simulation of static and dynamic characteristics of dual-gate metal oxide semiconductor thyristor von IWAMURO, N, SEKI, Y

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Energy dependence of sensitivity and its control by electrode design in a-Si:H/c-Si heterojunction gamma-ray detectors for dosimeters von SATO, N, OKAMOTO, E, SUZUKI, T, SEKI, Y

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Local oxidation of 6H-SiC von UENO, K, SEKI, Y

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1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability von Onozawa, Y, Otsuki, M, Iwamuro, N, Miyashita, S, Miyasaka, T, Seki, Y, Matsumoto, T

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A study on the short-circuit capability of field-stop IGBTs von Otsuki, M., Onozawa, Y., Kanemaru, H., Seki, Y., Matsumoto, T.

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Details of development for IGBT von Seki, Yasukazu

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1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability von Onozawa, Y., Otsuki, M., Iwamuro, N., Miyashita, S., Miyasaka, T., Seki, Y., Matsumoto, T.

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600V Trench-Gate FS-IGBT with Micro-P Structure von Nakano, Hayato, Onozawa, Yuichi, Kawano, Ryouichi, Yamazaki, Tomoyuki, Seki, Yasukazu

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Plasma CVD-grown 10B-enriched boron films for Si neutron detectors von SATO, N, ISHIWATA, O, SEKI, Y, UEDA, A

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600V Trench-Gate FS-IGBT with Micro-P Structure von Nakano, Hayato, Onozawa, Yuichi, Kawano, Ryouichi, Yamazaki, Tomoyuki, Seki, Yasukazu

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Investigation of the inversion layer electron mobility in α-SiC von Ueno, Katsunori, Seki, Yasukazu

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Experimental and Numerical Studies on dV/dt Robustness of 1200 V High-Voltage Integrated Circuits Using Self-Isolation Structure von Yamazaki, Tomoyuki, Jimbo, Shin-ichi, Kumagai, Naoki, Nishiura, Akira, Fujihira, Tatsuhiko, Seki, Yasukazu, Matsumoto, Takashi

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2.5 kV-1000 A power pack IGBT (high power flat-packaged NPT type RC-IGBT) von Takahashi, Y., Yoshikawa, K., Soutome, M., Fujii, T., Kirihata, H., Seki, Y.

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Manufacturing method of semiconductor device having a voltage resistant structure von Yoshikawa, Koh, Nakazawa, Haruo, Iguchi, Kenichi, Okumura, Katsuya, Seki, Yasukazu

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The guard-ring termination for the high-voltage SiC Schottky barrier diodes von Ueno, K., Urushidani, T., Hashimoto, K., Seki, Y.

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE von YOSHIKAWA Koh, NAKAZAWA Haruo, OKUMURA Katsuya, IGUCHI Kenichi, SEKI Yasukazu

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Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology von Iguchi Kenichi, Seki Yasukazu, Nakazawa Haruo, Yoshikawa Koh

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Semiconductor device having a voltage resistant structure von Iguchi Kenichi, Seki Yasukazu, Nakazawa Haruo, Okumura Katsuya, Yoshikawa Koh

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