Extension of the Si:C Stressor Thickness by Using Multiple ClusterCarbon Species von Sekar, Karuppanan, Krull, Wade

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Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing von Yoo, Woo Sik, Kang, Kitaek, Nishigaki, Hiroshi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro, Sekar, Karuppanan

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(Invited) Strained Si:C Using ClusterCarbon Implant von Sekar, Karuppanan, Krull, Wade

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Silicon-Carbon Formed Using Cluster-Carbon Implant and Laser-Induced Epitaxy for Application as Source/Drain Stressors in Strained n-Channel MOSFETs von Koh, Shao-Ming, Wang, Xincai, Sekar, Karuppanan, Krull, Wade, Samudra, Ganesh S., Yeo, Yee-Chia

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N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy von Shao-Ming Koh, Sekar, K., Lee, D., Krull, W., Xincai Wang, Samudra, G.S., Yee-Chia Yeo

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Optimization of ClusterCarbon™ process parameters for strained Si lattice von Sekar, Karuppanan, Krull, Wade A., Horsky, Thomas N., Feudel, Thomas, Krüger, Christian, Flachowsky, Stefan, Ostermay, Ina

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Optimization of ClusterCarbonTM process parameters for strained Si lattice von Sekar, Karuppanan, Krull, Wade A, Horsky, Thomas N, Feudel, Thomas, Kruger, Christian, Flachowsky, Stefan, Ostermay, Ina

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Amorphization of Si using cluster ions von Romano, Lucia, Jones, Kevin S., Sekar, Karuppanan, Krull, Wade A.

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Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si von Cho, Ta-Chun, Lu, Yu-Lun, Yao, Jie-Yi, Lee, Yao-Jen, Sekar, Karuppanan, Tokoro, Nobuhiro, Onoda, Hiroshi, Krull, Wade, Current, Michael I., Chao, Tien-Sheng

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ClusterBoron Implant Alternative to BF{sub 2} PMOS SDE von Feudel, Thomas, Illgen, Ralf, Krueger, Christian, Braun, Marek, Sekar, Karuppanan, Lee, David, Krull, Wade

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ClusterBoronTM Implant Alternative to BF2 PMOS SDE von Feudel, Thomas, Illgen, Ralf, Kruger, Christian, Braun, Marek, Sekar, Karuppanan, Lee, David, Krull, Wade

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Optimization of annealing for ClusterBoron® and ClusterCarbon PMOS SDE von Karuppanan Sekar, Krull, W., Verheyden, K., Funk, K.

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Strained Si:C Using ClusterCarbon Implant von Sekar, Karuppanan, Krull, Wade

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Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing von Yoo, Woo Sik, Kang, Kitaek, Nishigaki, Hiroshi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro, Sekar, Karuppanan

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Formation of USJ with cluster implants for 32nm node and beyond von Sekar, K., Krull, W.

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Strained SixC1-x Layer Using ClusterIon Implants von Sekar, Karuppanan, Krull, Wade, Horsky, Thomas

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Cluster carbon implants - Cluster size and implant temperature effect von Sekar, Karuppanan, Krull, Wade, Current, Michael, Onoda, Hiroshi, Nakashima, Yoshiki, Hamamoto, Nariaki, Nagayama, Tsutomu

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Optimization of Shallow Junctions Achieved by Cluster Ion Implants and Excimer Laser Annealing von Krull, Wade, Sekar, Karuppanan, Sebatier, Clement, Rack, Simon

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Annealing behavior of clustercarbon™ implants von Sekar, Karuppanan, Krull, Wade, Chan, Jason, McCoy, Steve, Gelpey, Jeff

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Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions von Current, Michael I., Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, Tien-Sheng Chao, Onoda, Hiroshi, Sekar, Karuppanan, Tokoro, Nobuhiro

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