Emerging Plasma Nanotechnology von Samukawa, Seiji

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A Neutral Beam Process for Controlling Surface Defect Generation and Chemical Reactions at the Atomic Layer von Samukawa, Seiji

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3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination von Wang, Xuelun, Zhao, Xixi, Takahashi, Tokio, Ohori, Daisuke, Samukawa, Seiji

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Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications von Simanjuntak, Firman Mangasa, Ohno, Takeo, Chandrasekaran, Sridhar, Tseng, Tseung-Yuen, Samukawa, Seiji

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The 2012 Plasma Roadmap von Samukawa, Seiji, Hori, Masaru, Rauf, Shahid, Tachibana, Kunihide, Bruggeman, Peter, Kroesen, Gerrit, Whitehead, J Christopher, Murphy, Anthony B, Gutsol, Alexander F, Starikovskaia, Svetlana, Kortshagen, Uwe, Boeuf, Jean-Pierre, Sommerer, Timothy J, Kushner, Mark J, Czarnetzki, Uwe, Mason, Nigel

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Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes von Zhu, Jun, Takahashi, Tokio, Ohori, Daisuke, Endo, Kazuhiko, Samukawa, Seiji, Shimizu, Mitsuaki, Wang, Xue-Lun

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Impact of nanopillars on phonon dispersion and thermal conductivity of silicon membranes von Anufriev, Roman, Ohori, Daisuke, Wu, Yunhui, Yanagisawa, Ryoto, Jalabert, Laurent, Samukawa, Seiji, Nomura, Masahiro

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Selective in-plane nitrogen doping of graphene by an energy-controlled neutral beam von Okada, Takeru, Samukawa, Seiji

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Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching von Samukawa, Seiji

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Coherent and Incoherent Impacts of Nanopillars on the Thermal Conductivity in Silicon Nanomembranes von Huang, Xin, Ohori, Daisuke, Yanagisawa, Ryoto, Anufriev, Roman, Samukawa, Seiji, Nomura, Masahiro

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Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method von Harada, Tomoki, Ohori, Daisuke, Endo, Kazuhiko, Samukawa, Seiji, Ikari, Tetsuo, Fukuyama, Atsuhiko

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Extremely low thermal conductivity of high density and ordered 10 nm-diameter silicon nanowires array von Kikuchi, Akiou, Yao, Akifumi, Mori, Isamu, Ono, Takahito, Samukawa, Seiji

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Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation von Ohno, Takeo, Samukawa, Seiji

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Composite films of highly ordered Si nanowires embedded in SiGe0.3 for thermoelectric applications von Kikuchi, Akiou, Yao, Akifumi, Mori, Isamu, Ono, Takahito, Samukawa, Seiji

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Surface modification of triboelectric materials by neutral beams von Kim, Wook, Okada, Takeru, Park, Hyun-Woo, Kim, Jihye, Kim, Sungsoo, Kim, Sang-Woo, Samukawa, Seiji, Choi, Dukhyun

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Influence of rf sputter power on ZnO film characteristics for transparent memristor devices von Simanjuntak, Firman Mangasa, Ohno, Takeo, Samukawa, Seiji

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Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy von Shiojima, Kenji, Suemitsu, Tetsuya, Ozaki, Takuya, Samukawa, Seiji

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Role of Doped Nitrogen in Graphene for Flow‐Induced Power Generation von Okada, Takeru, Kalita, Golap, Tanemura, Masaki, Yamashita, Ichiro, Meyyappan, M., Samukawa, Seiji

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High-performance and damage-free neutral-beam etching processes using negative ions in pulse-time-modulated plasma von SAMUKAWA, Seiji

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Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics von Imaoka, Takane, Okada, Takeru, Samukawa, Seiji, Yamamoto, Kimihisa

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