Modeling of high-current source-gated transistors in amorphous silicon von Balon, F., Shannon, J. M., Sealy, B. J.

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Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants von Nejim, A, Sealy, B J

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Differential Hall profiling of ultra-shallow junctions in Si and SOI von Bennett, N.S., Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J.

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Concentration profiles of antimony-doped shallow layers in silicon von Alzanki, T, Gwilliam, R, Emerson, N, Tabatabaian, Z, Jeynes, C, Sealy, B J

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Dual carbon effect on electrical properties of high dose indium implants in silicon von GENNARO, S, SEALY, B. J, GWILLIAM, R. M

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Oxygen-related vacancy-type defects in ion-implanted silicon von Pi, X D, Burrows, C P, Coleman, P G, Gwilliam, R M, Sealy, B J

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Suppression of boron interstitial clusters in SOI using vacancy engineering von Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J., Milosavljevic, M., Collart, E., Gennaro, S., Bersani, M., Barozzi, M.

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Raman scattering studies of ultrashallow Sb implants in strained Si von O’Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B., Lankinen, A., Tuomi, T. O.

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Low-temperature processing of antimony-implanted silicon von ALZANKI, T, GWILLIAM, R, EMERSON, N. G, SEALY, B. J

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On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs von Bailey, M.J., Jeynes, C., Sealy, B.J., Webb, R.P., Gwilliam, R.M.

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Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth von GILLIN, W. P, DUNSTAN, D. J, HOMEWOOD, K. P, HOWARD, L. K, SEALY, B. J

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Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures von Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C., Coleman, P. G.

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Proton implantation for isolation of n-type GaAs layers at different substrate temperatures von Ahmed, S, Gwilliam, R, Sealy, B J

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The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation von Ahmed, S, Knights, A P, Gwilliam, R, Sealy, B J

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Evaluation of BBr2+ and B++Br+ implants in silicon von Sharp, J.A., Gwilliam, R.M., Sealy, B.J., Jeynes, C., Hamilton, J.J., Kirkby, K.J.

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The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates von Tsang, W.M., Stolojan, V., Wong, S.P., Sealy, B.J., Silva, S.R.P.

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Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs von Ahmed, S., Sealy, B.J., Gwilliam, R.

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Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature von Ahmed, S., Sealy, B.J., Gwilliam, R.

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Constraints on micro-Raman strain metrology for highly doped strained Si materials von O’Reilly, L., Horan, K., McNally, P. J., Bennett, N. S., Cowern, N. E. B., Lankinen, A., Sealy, B. J., Gwilliam, R. M., Noakes, T. C. Q., Bailey, P.

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Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures von Too, P., Ahmed, S., Sealy, B. J., Gwilliam, R.

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