Comparison of femtosecond- and nanosecond-two-photon-absorption laser-induced fluorescence (TALIF) of atomic oxygen in atmospheric-pressure plasmas von Schmidt, Jacob B, Sands, Brian, Scofield, James, Gord, James R, Roy, Sukesh

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Design and Performance Evaluation of a 200 °C Interleaved Boost Converter von Kosai, Hiroyuki, Scofield, James, McNeal, Seana, Jordan, Brett, Ray, Biswajit

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Relative electron density distribution in a low nd helium dc discharge von Ganguly, Biswa N., Scofield, James D.

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Corporate culture and ethics: from words to actions von Enciso, Sarah, Milikin, Carlson, O’Rourke, James Scofield

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Influence of oxide buffer layers on the growth of carbon nanotube arrays on carbon substrates von Quinton, Betty T., Leedy, Kevin D., Lawson, Jacob W., Tsao, Bang, Scofield, James D., Merrett, Joseph N., Zhang, Qiuhong, Yost, Kevin, Mukhopadhyay, Sharmila M.

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Voltage and pressure scaling of streamer dynamics in a helium plasma jet with N2 co-flow von Leiweke, Robert J., Ganguly, Biswa N., Scofield, James D.

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Silicon Carbide Power Modules for High-Temperature Applications von Palmer, M. J., Johnson, R. W., Autry, T., Aguirre, R., Lee, V., Scofield, J. D.

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Power Device Packaging Technologies for Extreme Environments von Johnson, R.W., Cai Wang, Yi Liu, Scofield, J.D.

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Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules von Richmond, Jim, Merrett, Joseph Neil, Agarwal, Anant K., Leslie, Scott, Scofield, James D.

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Plasmas with an index of refraction greater than 1 von NILSEN, Joseph, SCOFIELD, James H

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Experimental Investigation of DC-Bias Related Core Losses in a Boost Inductor von Kosai, Hiroyuki, Turgut, Zafer, Scofield, James

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Condition Monitoring of DC-Link Capacitors Using Time-Frequency Analysis and Machine Learning Classification of Conducted EMI von McGrew, Tyler, Sysoeva, Viktoriia, Cheng, Chi-Hao, Miller, Chad, Scofield, James, Scott, Mark J.

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Performance Comparison of Finemet and Metglas Tape Cores Under Non-Sinusoidal Waveforms With DC Bias von Kosai, Hiroyuki, Turgut, Zafer, Bixel, Tyler, Scofield, James

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Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C von Adedeji, Adetayo V., Ahyi, Ayayi C., Williams, John R., Mohney, Suzanne E., Scofield, James D.

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TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC von Tsao, Bang Hung, Baca, Javier Francisco, Lawson, Jacob W., Scofield, James D.

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3D Thermal Stress Model for SiC Power Modules von Tsao, Bang Hung, Brown, Jeffery, Lawson, Jacob, Laing, Clinton, Scofield, James D.

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A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs von Heath, Bradley, Agarwal, Anant K., Husna, Fatima, Ryu, Sei Hyung, Palmour, John W., Richmond, Jim, Krishnaswami, Sumi, Hull, Brett A., Scofield, James D.

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Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC von Smith, Howard E., Tsao, Bang Hung, Scofield, James D.

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Ti/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC von Tsao, Bang Hung, Lawson, Jacob, Scofield, James D.

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High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs von Agarwal, Anant K., Husna, Fatima, Kosai, Hiroyuki, Jordan, Brett, Ryu, Sei Hyung, Krishnaswami, Sumi, Scofield, James D.

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