Two-dimensional materials and their prospects in transistor electronics von Schwierz, F, Pezoldt, J, Granzner, R

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Low-field electron mobility in wurtzite InN von Polyakov, V. M., Schwierz, F.

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Electron mobility models for 4H, 6H, and 3C SiC [MESFETs] von Roschke, M., Schwierz, F.

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Side-gate graphene field-effect transistors with high transconductance von Hähnlein, B., Händel, B., Pezoldt, J., Töpfer, H., Granzner, R., Schwierz, F.

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Electrical gating and rectification in graphene three-terminal junctions von Händel, B., Hähnlein, B., Göckeritz, R., Schwierz, F., Pezoldt, J.

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AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications von Tonisch, K., Jatal, W., Niebelschuetz, F., Romanus, H., Baumann, U., Schwierz, F., Pezoldt, J.

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Low-field and high-field electron transport in zinc blende InN von Polyakov, V. M., Schwierz, F., Fuchs, F., Furthmüller, J., Bechstedt, F.

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Graphene field effect transistor improvement by graphene–silicon dioxide interface modification von Pezoldt, J., Hummel, Ch, Schwierz, F.

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Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures von Polyakov, V. M., Schwierz, F., Cimalla, I., Kittler, M., Lübbers, B., Schober, A.

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Formation of two-dimensional electron gases in polytypic SiC heterostructures von Polyakov, V. M., Schwierz, F.

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An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs von Granzner, R., Schwierz, F., Polyakov, V.M.

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Graphene for electronic applications - Transistors and more von Schwierz, F

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Influence of band structure and intrinsic carrier concentration on the THz surface emission from InN and InAs von Polyakov, V M, Schwierz, F

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Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar + implanted 3C-SiC (001) von Tschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

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Modeling of the steady state characteristics of large-area graphene field-effect transistors von Thiele, S., Schwierz, F.

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An electron mobility model for wurtzite GaN von Schwierz, Frank

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Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels von Thiele, S. A., Schaefer, J. A., Schwierz, F.

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(Invited) Performance of Graphene and Beyond Graphene 2D Semiconductor Devices von Schwierz, Frank

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Performance trends of Si-based RF transistors von Schwierz, F., Schippel, C.

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Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results von Granzner, R., Polyakov, V.M., Schwierz, F., Kittler, M., Luyken, R.J., Rösner, W., Städele, M.

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