Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials von Walker, R., Gurary, A.I., Yuan, C., Zawadzki, P., Moy, K., Salagaj, T., Thompson, A.G., Krolla, W.J., Stall, R.A., Schumaker, N.E.

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Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors von Gurary, A.I., Tompa, G.S., Thompson, A.G., Stall, R.A., Zawadzki, P.A., Schumaker, N.E.

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Investigation of the wafer temperature uniformity in an OMVPE vertical rotating disk reactor von GURARY, A. I, THOMPSON, A. G, STALL, R. A, KROLL, W. J, SCHUMAKER, N. E

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Characterization of GaAs films grown by metalorganic chemical vapor deposition von SWAMINATHAN, V, VAN HAREN, D. L, SZILKO, J. L, LU, P. Y, SCHUMAKER, N. E

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Ambipolar transport in double heterostructure injection lasers von Anthony, P.J., Schumaker, N.E.

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Singular instabilities on LPE GaAs, CVD Si, and MBE InP growth surfaces von Rode, D. L., Wagner, W. R., Schumaker, N. E.

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Temperature dependence of the lasing threshold current of double heterostructure injection lasers due to drift current loss von Anthony, P. J., Schumaker, N. E.

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Layer thickness uniformity in liquid phase epitaxy: A two-dimensional diffusion analysis von Leung, S.Y., Schumaker, N.E.

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Anodic Dissolution and Selective Etching of Gallium Phosphide von Meek, R. L., Schumaker, N. E.

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Effects of Ga(As,Sb) active layers and substrate dislocation density on the reliability of 0.87-μm (Al,Ga)As lasers von Anthony, P. J., Hartman, R. L., Schumaker, N. E., Wagner, W. R.

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Lattice parameter changes in Al0.39Ga0.61As due to O, Ge, Si, and S doping von WAGNER, W. R, SCHUMAKER, N. E, ZILKO, J. L, ANTHONY, P. J, SWAMINATHAN, V

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Simulation of slider-induced convection in horizontal LPE slider system von Leung, S.Y., Schumaker, N.E.

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High resistivity interfacial layers due to compensation by Sulfur in (Al,Ga)As devices von Anthony, P.J., Schumaker, N.E., Zilko, J.L.

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Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material von Nash, F. R., Dixon, R. W., Barnes, P. A., Schumaker, N. E.

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VI-5 accelerated aging of (Al,Ga)As double heterostructure lasers von Hartman, R.L., Schumaker, N.E., Dixon, R.W.

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MOCVD Technology von Schumaker, N. E., Stall, R. A., Wagner, W. R., Polgar, L. G.

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Capacitance Spectroscopy Studies of Degraded AlxGa1-xAs DH Stripe-Geometry Lasers von Lang, D V, Hartman, R L, Schumaker, N E

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Doping Effects on Rake-Line Formation in LPE Growth of AlxGa1--xAs DH Lasers von Logan, R A, Schumaker, N E, Henry, C H, Merritt, F R

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The effect of gas temperature on the growth of InP by atmospheric pressure metal-organic chemical vapor deposition using trimethyl indium and PH3 sources von ZILKO, J. L, VAN HAREN, D. L, SCHUMAKER, N. E, LEUNG, S. Y

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Dicing Induced Damage in GaP Electroluminescent Diodes von Schumaker, N. E., Rozgonyi, G. A.

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