Thermal decomposition behavior of the HfO2/SiO2/Si system von Sayan, S., Garfunkel, E., Nishimura, T., Schulte, W. H., Gustafsson, T., Wilk, G. D.

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Chemical vapor deposition of HfO2 films on Si(100) von Sayan, S., Aravamudhan, S., Busch, B. W., Schulte, W. H., Cosandey, F., Wilk, G. D., Gustafsson, T., Garfunkel, E.

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Advances in high κ gate dielectrics for Si and III–V semiconductors von Kwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T.

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Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition von Tsai, W., Carter, R.J., Nohira, H., Caymax, M., Conard, T., Cosnier, V., DeGendt, S., Heyns, M., Petry, J., Richard, O., Vandervorst, W., Young, E., Zhao, C., Maes, J., Tuominen, M., Schulte, W.H., Garfunkel, E., Gustafsson, T.

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Interface reactions of high-κ Y2O3 gate oxides with Si von Busch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., Gustafsson, T.

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Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon von Chambers, J.J., Busch, B.W., Schulte, W.H., Gustafsson, T., Garfunkel, E., Wang, S., Maher, D.M., Klein, T.M., Parsons, G.N.

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High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering von Gustafsson, T, Lu, H.C, Busch, B.W, Schulte, W.H, Garfunkel, E

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Limitations to depth resolution in ion scattering experiments von Schulte, W.H., Busch, B.W., Garfunkel, E., Gustafsson, T., Schiwietz, G., Grande, P.L.

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Laboratory for Underground Nuclear Astrophysics (LUNA) von Greife, U., Arpesella, C., Barnes, C.A., Bartolucci, F., Bellotti, E., Broggini, C., Corvisiero, P., Fiorentini, G., Fubini, A., Gervino, G., Gorris, F., Gustavino, C., Junker, M., Kavanagh, R.W., Lanza, A., Mezzorani, G., Prati, P., Quarati, P., Rodney, W.S., Rolfs, C., Schulte, W.H., Trautvetter, H.P., Zahnow, D.

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Layer-resolved depth profiling at single crystal surfaces von Busch, B.W., Schulte, W.H., Gustafsson, T., Uebing, C.

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Production of short ion pulses for TOF-RBS von Piel, N, Becker, H.W, Meijer, J, Schulte, W.H, Rolfs, C

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A recoil separator for the measurement of radiative capture reactions von Gialanella, L, Strieder, F, Brand, K, Campajola, L, D'Onofrio, A, Greife, U, Huttel, E, Petrazzuolo, F, Roca, V, Rolfs, C, Romano, M, Romoli, M, Schmidt, S, Schulte, W.H, Terrasi, F, Trautvetter, H.P, Zahnow, D

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Interconnected UHV facilities for materials preparation and analysis von Kubsky, S, Borucki, L, Gorris, F, Becker, H.W, Rolfs, C, Schulte, W.H, Baumvol, I.J.R, Stedile, F.C

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Gamma-ray detection with a 4π NaI spectrometer for material analysis von Mehrhoff, M, Aliotta, M, Baumvol, I.J.R, Becker, H.-W, Berheide, M, Borucki, L, Domke, J, Gorris, F, Kubsky, S, Piel, N, Roters, G, Rolfs, C, Schulte, W.H

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Ion dose determination using beam chopper techniques von Piel, N., Berheide, M., Polaczyk, Ch, Rolfs, C., Schulte, W.H.

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Isotopic tracing of Si during thermal growth of Si3N4 ultrathin films von Baumvol, I.J.R., Borucki, L., Chaumont, J., Ganem, J.-J., Kaytasov, O., Piel, N., Rigo, S., Schulte, W.H., Stedile, F.C., Trimaille, I.

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Efficient γ-ray detection in ion beam analysis von Piel, N., Schulte, W.H., Berheide, M., Becker, H.W., Borucki, L., Grama, C., Mehrhoff, M., Rolfs, C.

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Nonperturbative treatment of medium-energy proton scattering under shadowing-blocking conditions in Al(110) von Grande, P. L., Hentz, A., Schiwietz, G., Schulte, W. H., Busch, B. W., Starodub, D., Gustafsson, T.

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IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning von Stedile, F.C., Baumvol, I.J.R., Ganem, J.-J., Rigo, S., Trimaille, I., Battistig, G., Schulte, W.H., Becker, H.W.

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Concept and status of the new sample preparation and analyzing facility at Bochum von Kubsky, S., Borucki, L., Berheide, M., Baier, S., Becker, H.-W., Gorris, F., Grunwald, C., Gutt, T., Krüger, G., Mehrhoff, M., Piel, N., Schulte, W.H., Rolfs, C.

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