Temperature effect on a weighted vortex spin-torque nano-oscillator for neuromorphic computing von Li, Ren, Rezaeiyan, Yasser, Böhnert, Tim, Schulman, Alejandro, Ferreira, Ricardo, Farkhani, Hooman, Moradi, Farshad

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Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition von Schulman, Alejandro, Kitoh, Ai, Stoliar, Pablo, Inoue, Isao H.

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The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers von Jenkins, Alex. S., Martins, Leandro, Benetti, Luana C., Schulman, Alejandro, Anacleto, Pedro, Claro, Marcel S., Caha, Ihsan, Deepak, Francis Leonard, Paz, Elvira, Ferreira, Ricardo

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Classification of multi-frequency RF signals by extreme learning, using magnetic tunnel junctions as neurons and synapses von Leroux, Nathan, Marković, Danijela, Sanz-Hernández, Dédalo, Trastoy, Juan, Bortolotti, Paolo, Schulman, Alejandro, Benetti, Luana, Jenkins, Alex, Ferreira, Ricardo, Grollier, Julie, Mizrahi, Frank Alice

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Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties von Schulman, Alejandro, Paz, Elvira, Böhnert, Tim, Jenkins, Alex Steven, Ferreira, Ricardo

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Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–x Ca x MnO3/Au Memristor Devices von Lähteenlahti, Ville, Schulman, Alejandro, Beiranvand, Azar, Huhtinen, Hannu, Paturi, Petriina

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Electron Doping Effect in the Resistive Switching Properties of Al/Gd 1- x Ca x MnO 3 /Au Memristor Devices von Lähteenlahti, Ville, Schulman, Alejandro, Beiranvand, Azar, Huhtinen, Hannu, Paturi, Petriina

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Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices von Miranda, Enrique, Lahteenlahti, Ville, Huhtinen, Hannu, Schulman, Alejandro, Paturi, Petriina

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Electron Doping Effect in the Resistive Switching Properties of Al/Gd1-xCaxMnO3/Au Memristor Devices von Lahteenlahti, Ville, Schulman, Alejandro, Beiranvand, Azar, Huhtinen, Hannu, Paturi, Petriina

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Structurally simplified GCMO crossbar design for artificial synaptic networks von Antola, Anni, Angervo, Ilari, Huhtinen, Hannu, Miettinen, Mikko, Schulman, Alejandro, Paturi, Petriina

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Bipolar Resistive Switching in 2D MoSe 2 Grown by Atmospheric Pressure Chemical Vapor Deposition von Fernandes, João, Grzonka, Justyna, Araújo, Guilherme, Schulman, Alejandro, Silva, Vitor, Rodrigues, João, Santos, João, Bondarchuk, Oleksandr, Ferreira, Paulo, Alpuim, Pedro, Capasso, Andrea

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Bioplausible Synaptic Behavior of Al/Gd 0.3 Ca 0.7 MnO 3 /Au Memristive Devices for Unsupervised Spiking Neural Networks von Hynnä, Teemu, Schulman, Alejandro, Lähteenlahti, Ville, Huhtinen, Hannu, Paturi, Petriina

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Multilayer spintronic neural networks with radiofrequency connections von Ross, Andrew, Leroux, Nathan, De Riz, Arnaud, Marković, Danijela, Sanz-Hernández, Dédalo, Trastoy, Juan, Bortolotti, Paolo, Querlioz, Damien, Martins, Leandro, Benetti, Luana, Claro, Marcel S., Anacleto, Pedro, Schulman, Alejandro, Taris, Thierry, Begueret, Jean-Baptiste, Saïghi, Sylvain, Jenkins, Alex S., Ferreira, Ricardo, Vincent, Adrien F., Mizrahi, Frank Alice, Grollier, Julie

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Bipolar Resistive Switching in 2D MoSe2 Grown by Atmospheric Pressure Chemical Vapor Deposition von Fernandes, João, Grzonka, Justyna, Araújo, Guilherme, Schulman, Alejandro, Silva, Vitor, Rodrigues, João, Santos, João, Bondarchuk, Oleksandr, Ferreira, Paulo, Alpuim, Pedro, Capasso, Andrea

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Tuned AFM–FM coupling by the formation of vacancy complex in Gd0.6Ca0.4MnO3 thin film lattice von Beiranvand, A, Liedke, M O, Haalisto, C, Lähteenlahti, V, Schulman, A, Granroth, S, Palonen, H, Butterling, M, Wagner, A, Huhtinen, H, Paturi, P

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Enhancing spin-transfer torque in magnetic tunnel junction devices: Exploring the influence of capping layer materials and thickness on device characteristics von Sadat Parvini, Tahereh, Paz, Elvira, Böhnert, Tim, Schulman, Alejandro, Benetti, Luana, Oberbauer, Felix, Walowski, Jakob, Moradi, Farshad, Ferreira, Ricardo, Münzenberg, Markus

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Bioplausible Synaptic Behavior of Al/Gd0.3Ca0.7MnO3/Au Memristive Devices for Unsupervised Spiking Neural Networks von Hynnä, Teemu, Schulman, Alejandro, Lähteenlahti, Ville, Huhtinen, Hannu, Paturi, Petriina

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Structural, electrical and magnetic properties of epitaxial La0.7Sr0.3CoO3 thin films grown on SrTiO3 and LaAlO3 substrates von Othmen, Z., Schulman, A., Daoudi, K., Boudard, M., Acha, C., Roussel, H., Oueslati, M., Tsuchiya, T.

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Is my device neuromorphic? von Stoliar, Pablo, Schulman, Alejandro, Inoue, Isao H.

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Multiband conduction on solid gate-controlled carrier density in SrTiO3 surface

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