Correlation of Optical, Structural, and Compositional Properties with V‑Pit Distribution in InGaN/GaN Multiquantum Wells von Zoellner, Marvin Hartwig, Chahine, Gilbert André, Lahourcade, Lise, Mounir, Christian, Manganelli, Costanza Lucia, Schülli, Tobias Urs, Schwarz, Ulrich Theodor, Zeisel, Roland, Schroeder, Thomas

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A study of the strain distribution by scanning X‐ray diffraction on GaP/Si for III–V monolithic integration on silicon von Zhou, Ang, Ping Wang, Yan, Cornet, Charles, Léger, Yoan, Pédesseau, Laurent, Favre-Nicolin, Vincent, Chahine, Gilbert André, Schülli, Tobias Urs, Eymery, Joël, Bahri, Mounib, Largeau, Ludovic, Patriarche, Gilles, Durand, Olivier, Létoublon, Antoine

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Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping von Chahine, Gilbert André, Richard, Marie-Ingrid, Homs-Regojo, Roberto Arturo, Tran-Caliste, Thu Nhi, Carbone, Dina, Jaques, Vincent Louis Robert, Grifone, Raphael, Boesecke, Peter, Katzer, Jens, Costina, Ioan, Djazouli, Hamid, Schroeder, Thomas, Schülli, Tobias Urs

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X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures : Self-organisation on surfaces von METZGER, Till Hartmut, SCHÜLLI, Tobias Urs, SCHMIDBAUER, Martin

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X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures von Metzger, Till Hartmut, Schülli, Tobias Urs, Schmidbauer, Martin

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