Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing von Schroder, Dieter K., Babcock, Jeff A.

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Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells von Sharma, Vivek, Tracy, Clarence, Schroder, Dieter, Herasimenka, Stanislau, Dauksher, William, Bowden, Stuart

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Some Semiconductor Device Physics Considerations and Clarifications von Xuan Yang, Schroder, D. K.

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Inherent diode isolation in programmable metallization cell resistive memory elements von Puthentheradam, Sarath C., Schroder, Dieter K., Kozicki, Michael N.

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Carrier Recombination Lifetime Measurement in Silicon Epitaxial Layers Using Optically Excited MOS Capacitor Technique von Khorasani, Arash Elhami, Schroder, Dieter K., Alford, T. L.

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Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers von ARASH ELHAMI KHORASANI, ALFORD, Terry Lynn, SCHRODER, Dieter K

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Negative bias temperature instability: What do we understand? von Schroder, Dieter K.

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A Fast Technique to Screen Carrier Generation Lifetime Using DLTS on MOS Capacitors von Elhami Khorasani, Arash, Schroder, Dieter K., Alford, T. L.

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Carrier Generation Lifetimes in 4H-SiC MOS Capacitors von Marinella, Matthew J, Schroder, Dieter K, Gilyong Chung, Loboda, Mark J, Isaacs-Smith, Tamara, Williams, John R

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Contactless surface charge semiconductor characterization von Schroder, Dieter K.

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Pseudo-MOSFET Drain-Current Transients: Influence of the Substrate von Kihoon Park, Nayak, P., Schroder, D.K.

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Some Recent Advances in Contactless Silicon Characterization von Schroder, Dieter

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Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior von Kihoon Park, Nayak, P., Cristoloveanu, S., Schroder, D.K.

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Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a flash EEPROM von Young-Bog Park, Schroder, D.K.

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Low-Frequency-Noise Spectroscopy of SIMOX and Bonded SOI Wafers von Kushner, V.A., Park, K., Schroder, D.K., Thornton, T.J.

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Effect of surface preparation on the current-voltage behavior of mercury-probe pseudo MOSFETs von Choi, J.Y., Schroder, D.K.

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Inherent diode isolation in programmable metallization cell resistive memory elements von Puthentheradam, Sarath C., Schroder, Dieter K., Kozicki, Michael N.

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Scaled silicon MOSFETs: degradation of the total gate capacitance von Vasileska, D., Schroder, D.K., Ferry, D.K.

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction von Marinella, M.J., Schroder, D.K., Chung, G.Y., Loboda, M.J., Isaacs-Smith, T., Williams, J.R.

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Coplanar waveguides and microwave inductors on silicon substrates von Reyes, A.C., El-Ghazaly, S.M., Dorn, S.J., Dydyk, M., Schroder, D.K., Patterson, H.

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