Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors von Simoen, E., Gaillardin, M., Paillet, P., Reed, R. A., Schrimpf, R. D., Alles, M. L., El-Mamouni, F., Fleetwood, D. M., Griffoni, A., Claeys, C.

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Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM von Turowski, Marek, Raman, Ashok, Alles, Michael L., Ball, Dennis, King, Michael P., Reed, Robert A., Schrimpf, Ron D.

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Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch von Warren, K.M., Sierawski, B.D., Reed, R.A., Weller, R.A., Carmichael, C., Lesea, A., Mendenhall, M.H., Dodd, P.E., Schrimpf, R.D., Massengill, L.W., Tan Hoang, Hsing Wan, De Jong, J.L., Padovani, R., Fabula, J.J.

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Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories von Warren, K.M., Wilkinson, J.D., Morrison, S., Weller, R.A., Porter, M.E., Sierawski, B.D., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D., Massengill, L.W.

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Proton radiation response mechanisms in bipolar analog circuits von Barnaby, H.J., Schrimpf, R.D., Sternberg, A.L., Berthe, V., Cirba, C.R., Pease, R.L.

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(Invited) Interface and Border Traps in Ge pMOSFETs von Fleetwood, Dan M, Simoen, Eddy, Francis, Sarah A., Zhang, C. X., Arora, Rajan, Zhang, Enxia, Schrimpf, Ron D., Galloway, Ken F., Mitard, Jerome, Claeys, C.

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Effect of carrier transport in oxides surrounding active devices on SEE in 45nm SOI SRAM von Turowski, M., Raman, A., Alles, M. L., Ball, D., King, M. P., Reed, R. A., Schrimpf, R. D.

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