Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors von Puzyrev, Y. S., Roy, T., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T.

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Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors von Puzyrev, Y. S., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T.

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Impact of Technology Scaling on SRAM Soft Error Rates von Chatterjee, I., Narasimham, B., Mahatme, N. N., Bhuva, B. L., Reed, R. A., Schrimpf, R. D., Wang, J. K., Vedula, N., Bartz, B., Monzel, C.

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Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures von Zhang, Z., Cardwell, D., Sasikumar, A., Kyle, E. C. H., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Speck, J. S., Arehart, A. R., Ringel, S. A.

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Bias Dependence of Total-Dose Effects in Bulk FinFETs von Chatterjee, I., Zhang, E. X., Bhuva, B. L., Alles, M. A., Schrimpf, R. D., Fleetwood, D. M., Fang, Y.-P, Oates, A.

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Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model von Trippe, J. M., Reed, R. A., Austin, R. A., Sierawski, B. D., Massengill, L. W., Weller, R. A., Warren, K. M., Schrimpf, R. D., Narasimham, B., Bartz, B., Reed, D.

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Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy von Zhang, Z., Arehart, A. R., Kyle, E. C. H., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Speck, J. S., Ringel, S. A.

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Electron-Induced Single-Event Upsets in Static Random Access Memory von King, M. P., Reed, R. A., Weller, R. A., Mendenhall, M. H., Schrimpf, R. D., Sierawski, B. D., Sternberg, A. L., Narasimham, B., Wang, J. K., Pitta, E., Bartz, B., Reed, D., Monzel, C., Baumann, R. C., Deng, X., Pellish, J. A., Berg, M. D., Seidleck, C. M., Auden, E. C., Weeden-Wright, S. L., Gaspard, N. J., Zhang, C. X., Fleetwood, D. M.

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Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs von El-Mamouni, F., Zhang, E. X., Pate, N. D., Hooten, N., Schrimpf, R. D., Reed, R. A., Galloway, K. F., McMorrow, D., Warner, J., Simoen, E., Claeys, C., Griffoni, A., Linten, D., Vizkelethy, G.

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Ozone-exposure and annealing effects on graphene-on-SiO2 transistors von Zhang, E X, Newaz, K M, Wang, B, Zhang, C X, Fleetwood, D M, Bolotin, K I, Schrimpf, R D, Pantelides, S T, Alles, M L

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The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing von Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M., Rowsey, N. L., Law, M. E., Tuttle, B. R., Pantelides, S. T.

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Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs von Kalavagunta, Aditya, Mukherjee, Shubhajit, Reed, Robert, Schrimpf, R.D.

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Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs von El-Mamouni, F., Zhang, E. X., Ball, D. R., Sierawski, B., King, M. P., Schrimpf, R. D., Reed, R. A., Alles, M. L., Fleetwood, D. M., Linten, D., Simoen, E., Vizkelethy, G.

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Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect von Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J., McMorrow, D., Wen, S., Wong, R., Salzman, J. F., Jordan, S., Pellish, J. A., Marshall, C. J., Gaspard, N. J., Bennett, W. G., Zhang, E. X., Bhuva, B. L.

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Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs von Zhang, E. X., Fleetwood, D. M., Pate, N. D., Reed, R. A., Witulski, A. F., Schrimpf, R. D.

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Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection von Black, J.D., Ball, D.R., Robinson, W.H., Fleetwood, D.M., Schrimpf, R.D., Reed, R.A., Black, D.A., Warren, K.M., Tipton, A.D., Dodd, P.E., Haddad, N.F., Xapsos, M.A., Kim, H.S., Friendlich, M.

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Radiation effects in new materials for nano-devices von Schrimpf, R.D., Fleetwood, D.M., Alles, M.L., Reed, R.A., Lucovsky, G., Pantelides, S.T.

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Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides von Turowski, M., Raman, A., Schrimpf, R.D.

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes von Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.

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Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS von DasGupta, S., Witulski, A.F., Bhuva, B.L., Alles, M.L., Reed, R.A., Amusan, O.A., Ahlbin, J.R., Schrimpf, R.D., Massengill, L.W.

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