Synthesis of Amorphous Silicon Colloids by Trisilane Thermolysis in High Temperature Supercritical Solvents von Pell, Lindsay E, Schricker, April D, Mikulec, Frederic V, Korgel, Brian A

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Temperature Dependence of the Field Effect Mobility of Solution-Grown Germanium Nanowires von Schricker, April D, Joshi, Sachin V, Hanrath, Tobias, Banerjee, Sanjay K, Korgel, Brian A

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Space charge limited currents and trap concentrations in GaAs nanowires von Schricker, April D, Davidson III, Forrest M, Wiacek, Robert J, Korgel, Brian A

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Supercritical Fluid-Liquid-Solid Synthesis of Gallium Arsenide Nanowires Seeded by Alkanethiol-Stabilized Gold Nanocrystals von Davidson III, F. M., Schricker, A. D., Wiacek, R. J., Korgel, B. A.

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Electrical transport, Meyer–Neldel rule and oxygen sensitivity of Bi2S3 nanowires von Schricker, April D, Sigman Jr, Michael B, Korgel, Brian A

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Electrical transport, Meyer–Neldel rule and oxygen sensitivity of Bi 2 S 3 nanowires von Schricker, April D, Sigman, Michael B, Korgel, Brian A

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MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME von SCHRICKER, APRIL, D

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Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same von SCHRICKER APRIL D

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Methods for increasing carbon nano-tube (CNT) yield in memory devices von SCHRICKER APRIL D

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Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices von Schricker, April D

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Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices von SCHRICKER APRIL D

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Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same von Schricker, April D

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Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same von SCHRICKER APRIL D

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METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT von SCHRICKER, APRIL, D

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Non-volatile storage system using opposite polarity programming signals for MIM memory cell von ZHANG JINGYAN, THIRUNAVUKKARASU UTTHAMAN, SCHRICKER APRIL D

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METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT von SCHRICKER, APRIL, D

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MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME von SCHRICKER, APRIL, D

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MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME von SCHRICKER, APRIL, D

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CARBON-BASED FILMS, AND METHODS OF FORMING THE SAME, HAVING DIELECTRIC FILLER MATERIAL AND EXHIBITING REDUCED THERMAL RESISTANCE von SCHRICKER, APRIL, D, MAXWELL, STEVEN

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METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES von SCHRICKER, APRIL, D

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