High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy von Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S., Nanver, L. K.

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Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation von Sarubbi, Francesco, Scholtes, Tom L. M., Nanver, Lis K.

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Boron-layer silicon photodiodes for high-efficiency low-energy electron detection von Šakić, Agata, Nanver, Lis K., Scholtes, Tom L.M., Heerkens, Carel Th.H., Knežević, Tihomir, Veen, Gerard van, Kooijman, Kees, Vogelsang, Patrick

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Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining von Xingyu Liu, Nanver, Lis K., Scholtes, Tom L. M.

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Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions von Sakic, Agata, Qi, Lin, Scholtes, Tom L.M., van der Cingel, Johan, Nanver, Lis K.

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Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems von Huang, C., Buisman, K., Marchetti, M., Nanver, L.K., Sarubbi, F., Popadic, M., Scholtes, T., Schellevis, H., Larson, L.E., de Vreede, L.

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Enabling Low-Distortion Varactors for Adaptive Transmitters von Huang, Cong, Larson, Lawrence E., Nanver, Lis K., de Vreede, Leo C. N., Sarubbi, Francesco, Popadic, Milos, Buisman, Koen, Qureshi, Jawad, Marchetti, Mauro, Akhnoukh, Atef, Scholtes, Tom L. M.

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High Effective Gummel Number of CVD Boron Layers in Ultrashallow \hbox^\hbox Diode Configurations von Sarubbi, Francesco, Nanver, Lis K, Scholtes, Tom L M

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Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions von Biasotto, Cleber, Gonda, Viktor, Nanver, Lis K., Scholtes, Tom L.M., van der Cingel, Johan, Vidal, Daniel, Jovanović, Vladimir

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Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes von Sakic, Agata, Scholtes, Tom L M, Boer, Wiebe de, Golshani, Negin, Derakhshandeh, Jaber, Nanver, Lis K

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High Effective Gummel Number of CVD Boron Layers in Ultrashallow [Formula Omitted] Diode Configurations von Sarubbi, Francesco, Nanver, Lis K, Scholtes, Tom L. M

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Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling von Nanver, L.K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L.C.N., Cong Huang, Milosavljevic, S., Goudena, E.J.G.

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Pattern Dependency of Pure-Boron-Layer Chemical-Vapor Depositions von Mohammadi, Vahid, De Boer, Wiebe, Scholtes, Tom L., Nanver, Lis K.

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Chemical Vapor Deposition of [alpha]-Boron Layers on Silicon for Controlled Nanometer-Deep p^sup +^n Junction Formation von Sarubbi, Francesco, Scholtes, Tom L M, Nanver, Lis K

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CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation von Sarubbi, Francesco, Nanver, Lis K., Scholtes, Tom L.

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A 67 dBm OIP3 Multistacked Junction Varactor von CONG HUANG, BUISMAN, Koen, NANVER, Lis K, SARUBBI, Francesco, POPADIE, Milos, SCHOLTES, Tom L. M, SCHELLEVIS, Hugo, LARSON, Lawrence E, DE VREEDE, Leo C. N

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High Effective Gummel Number of CVD Boron Layers in Ultrashallow hboxp +hboxn Diode Configurations von Sarubbi, Francesco, Nanver, Lis K, Scholtes, Tom LM

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A 67 dBm Multistacked Junction Varactor von Huang, Cong, Buisman, Koen, Nanver, Lis K., Sarubbi, Francesco, Popadic, Milos, Scholtes, Tom L. M., Schellevis, Hugo, Larson, Lawrence E., de Vreede, Leo C. N.

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Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AIN Cooling : THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING von NANVER, Lis K, SCHELLEVIS, Hugo, CONG HUANG, MILOSAVLJEVIC, Silvana, GOUDENA, Egbert J. G, SCHOLTES, Tom L. M, LA SPINA, Luigi, LORITO, Gianpaolo, SARUBBI, Francesco, GONDA, Viktor, POPADIC, Miloš, BUISMAN, Koen, DE VREEDE, Leo C. N

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Reverse biasing and breakdown behavior of PureB diodes von Lin Qi, Mok, K. R. C., Aminian, Mahdi, Scholtes, Tom L. M., Charbon, Edoardo, Nanver, Lis K.

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