Insulator passivation of In/sub 0.2/Ga/sub 0.8/As-GaAs surface quantum wells von Passlack, M., Hong, M., Harris, T.D., Mannaerts, J.P., Vakhshoori, D., Schnoes, M.L.

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A Ga2O3 passivation technique compatible with GaAs device processing von Hong, M, Passlack, M, Mannaerts, J.P, Harris, T.D, Schnoes, M.L, Opila, R.L, Krautter, H.W

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Antimony doping of ZnTe grown by molecular beam epitaxy von Feldman, R.D., Austin, R.F., Sher, A., Schnoes, M.L., Downey, S.W., Emerson, A.B., Harris, T.D., Spitzer, R.C., Gualtieri, G.J., Schwartz, G.P.

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Chemical vapor deposition of ruthenium and ruthenium dioxide films von GREEN, M. L, GROSS, M. E, PAPA, L. E, SCHNOES, K. J, BRASEN, D

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