Low-pressure chemical vapor deposition for very large-scale integration processing-A review von Kern, W., Schnable, G.L.

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Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits von Smeltzer, R.K., Schnable, G.L.

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METHOD OF PASSIVATING AN INTEGRATED CIRCUIT DEVICE von DAWSON R.H, SCHNABLE G.L

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METHOD OF PASSIVATING AN INTEGRATED CIRCUIT DEVICE von DAWSON R.H, SCHNABLE G.L

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IMPROVED METHOD OF PASSIVATING AN INTEGRATED CIRCUIT ARRANGEMENT von DAWSON R.H, SCHNABLE G.L

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Reliability of CMOS Integrated Circuits von Schnable, G.L., Gallace, L.J., Pujol, H.L.

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Aluminum metallization-Advantages and limitations for integrated circuit applications von Schnable, G.L., Keen, R.S.

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CMOS reliability von Gallace, L.J, Pujol, H.L, Schnable, G.L

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Reliability of Complementary MOS Integrated Circuits von Vincoff, M.N., Schnable, G.L.

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Failure mechanisms in large-scale integrated circuits von Schnable, G.L., Keen, R.S.

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The application of test structures for the study of surface effects in LSI circuitry von Schlegel, E.S., Schnable, G.L.

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Some reliability considerations pertaining to LSI technology von Schlacter, M.M., Keen, R.S., Schnable, G.L.

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Impact of the radiation environment on integrated-circuit technology von Spratt, J.P., Schnable, G.L., Standeven, J.D.

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Advantages of vapor-plated phosphosilicate films in large-scale integrated circuit arrays von Schlacter, M.M., Schlegel, E.S., Keen, R.S., Lathlaen, R.A., Schnable, G.L.

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Behavior of surface ions on semiconductor devices von Schlegel, E.S., Schnable, G.L., Schwarz, R.F., Spratt, J.P.

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Development of large-area 200-volt planar voltage-variable capacitance diodes von Schnable, G.L., Certa, A.J., Wallace, L.F.

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High-frequency instrumentation von Clayton, J.C., Hazel, J.F., McNabb, W.M., Schnable, G.L.

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A high-frequency titration apparatus von Clayton, J.C., Hazel, J.F., Mcnabb, W.M., Schnable, G.L.

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