Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition von Wood, Joshua D, Schmucker, Scott W, Lyons, Austin S, Pop, Eric, Lyding, Joseph W

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Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane von Koepke, Justin C, Wood, Joshua D, Chen, Yaofeng, Schmucker, Scott W, Liu, Ximeng, Chang, Noel N, Nienhaus, Lea, Do, Jae Won, Carrion, Enrique A, Hewaparakrama, Jayan, Rangarajan, Aniruddh, Datye, Isha, Mehta, Rushabh, Haasch, Richard T, Gruebele, Martin, Girolami, Gregory S, Pop, Eric, Lyding, Joseph W

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Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices von Wyrick, Jonathan, Wang, Xiqiao, Kashid, Ranjit V., Namboodiri, Pradeep, Schmucker, Scott W., Hagmann, Joseph A., Liu, Keyi, Stewart, Michael D., Richter, Curt A., Bryant, Garnett W., Silver, Richard M.

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Atom-by-Atom Construction of a Cyclic Artificial Molecule in Silicon von Wyrick, Jonathan, Wang, Xiqiao, Namboodiri, Pradeep, Schmucker, Scott W, Kashid, Ranjit V, Silver, Richard M

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Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control von Cress, Cory D, Schmucker, Scott W, Friedman, Adam L, Dev, Pratibha, Culbertson, James C, Lyding, Joseph W, Robinson, Jeremy T

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Electronic Hybridization of Large-Area Stacked Graphene Films von Robinson, Jeremy T, Schmucker, Scott W, Diaconescu, C. Bogdan, Long, James P, Culbertson, James C, Ohta, Taisuke, Friedman, Adam L, Beechem, Thomas E

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Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes von Rossi, Jamie E., Soule, Karen J., Cleveland, Erin, Schmucker, Scott W., Cress, Cory D., Cox, Nathanael D., Merrill, Andrew, Landi, Brian J.

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Reducing flicker noise in chemical vapor deposition graphene field-effect transistors von Arnold, Heather N., Sangwan, Vinod K., Schmucker, Scott W., Cress, Cory D., Luck, Kyle A., Friedman, Adam L., Robinson, Jeremy T., Marks, Tobin J., Hersam, Mark C.

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Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy von Namboodiri, Pradeep, Wyrick, Jonathan, Stan, Gheorghe, Wang, Xiqiao, Fei, Fan, Kashid, Ranjit Vilas, Schmucker, Scott W., Kasica, Richard, Barnes, Bryan M., Stewart Jr, Michael D., Silver, Richard M.

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Raman signature of defected twisted bilayer graphene von Schmucker, Scott W., Cress, Cory D., Culbertson, James C., Beeman, Jeffrey W., Dubon, Oscar D., Robinson, Jeremy T.

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Atomic-scale control of tunneling in donor-based devices von Wang, Xiqiao, Wyrick, Jonathan, Kashid, Ranjit V., Namboodiri, Pradeep, Schmucker, Scott W., Murphy, Andrew, Stewart, M. D., Silver, Richard M.

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Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ -Doped Silicon von Young, Steve M., Katzenmeyer, Aaron M., Anderson, Evan M., Luk, Ting S., Ivie, Jeffrey A., Schmucker, Scott W., Gao, Xujiao, Misra, Shashank

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Tunable Radiation Response in Hybrid Organic–Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics von Arnold, Heather N, Cress, Cory D, McMorrow, Julian J, Schmucker, Scott W, Sangwan, Vinod K, Jaber-Ansari, Laila, Kumar, Rajan, Puntambekar, Kanan P, Luck, Kyle A, Marks, Tobin J, Hersam, Mark C

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Low thermal budget high-k/metal surface gate for buried donor-based devices von Anderson, Evan M, Campbell, DeAnna M, Maurer, Leon N, Baczewski, Andrew D, Marshall, Michael T, Lu, Tzu-Ming, Lu, Ping, Tracy, Lisa A, Schmucker, Scott W, Ward, Daniel R, Misra, Shashank

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Dry graphene transfer print to polystyrene and ultra-high molecular weight polyethylene − Detailed chemical, structural, morphological and electrical characterization von Lock, Evgeniya H., Delongchamp, Dean M., Schmucker, Scott W., Simpkins, Blake, Laskoski, Matthew, Mulvaney, Shawn P., Hines, Daniel R., Baraket, Mira, Hernandez, Sandra C., Robinson, Jeremy T., Sheehan, Paul E., Jaye, Cherno, Fisher, Daniel A., Walton, Scott G.

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Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation von Friedman, Adam L., Cress, Cory D., Schmucker, Scott W., Robinson, Jeremy T., van ‘t Erve, Olaf M. J.

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Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide von Schmucker, Scott W., Namboodiri, Pradeep N., Kashid, Ranjit, Wang, Xiqiao, Hu, Binhui, Wyrick, Jonathan E., Myers, Alline F., Schumacher, Joshua D., Silver, Richard M., Stewart, M. D.

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Electron-electron interactions in low-dimensional Si:P delta layers von Hagmann, Joseph A., Wang, Xiqiao, Kashid, Ranjit, Namboodiri, Pradeep, Wyrick, Jonathan, Schmucker, Scott W., Stewart, M. D., Silver, Richard M., Richter, Curt A.

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A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1 von Campbell, Quinn, Ivie, Jeffrey A., Bussmann, Ezra, Schmucker, Scott W., Baczewski, Andrew D., Misra, Shashank

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A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2×1 von Campbell, Quinn, Ivie, Jeffrey A., Bussmann, Ezra, Schmucker, Scott W., Baczewski, Andrew D., Misra, Shashank

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