Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy von Schiz, J.F.W., Lamb, A.C., Cristiano, F., Bonar, J., Ashburn, P., Hall, S., Hemment, P.L.F.

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The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base von Lukyanchikova, N., Garbar, N., Petrichuk, M., Schiz, J.F.W., Ashburn, P.

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The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base von Lukyanchikova, N, Garbar, N, Petrichuk, M, Schiz, J.F.W, Ashburn, P

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Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy von Lamb, A.C, Schiz, J.F.W, Bonar, J.M, Cristiano, F, Ashburn, P, Hall, S, Hemment, P.L.F

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Increased current gain and reduced emitter resistance in F-implanted, low thermal budget polysilicon emitters for SiGe HBTs von Moiseiwitsch, N.E., Schiz, J.F.W., Marsh, C.D., Ashburn, P., Booker, G.R.

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