Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells von Timò, G., Abagnale, G., Armani, N., Malvisi, E., Carbi, G., Farina, F., Schineller, B.

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GaN boules grown by high rate HVPE von Richter, E., Gründer, M., Schineller, B., Brunner, F., Zeimer, U., Netzel, C., Weyers, M., Tränkle, G.

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Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells von Timò, G., Abagnale, G., Armani, N., Malvisi, E., Carbi, G., Farina, F., Schineller, B.

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Control of Cell Division in Escherichia coli: Regulation of Transcription of ftsQA Involves both rpoS and SdiA-Mediated Autoinduction von Sitnikov, Dmitry M., Schineller, Jeffrey B., Baldwin, Thomas O.

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Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor von Hemmingsson, C., Paskov, P.P., Pozina, G., Heuken, M., Schineller, B., Monemar, B.

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Transcriptional regulation of bioluminesence genes from Vibrio fischeri von Sitnikov, Dmitry M., Schineller, Jeffrey B., Baldwin, Thomas O.

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Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor von Hemmingsson, C., Pozina, G., Heuken, M., Schineller, B., Monemar, B.

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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers von Eckey, L., von Gfug, U., Holst, J., Hoffmann, A., Kaschner, A., Siegle, H., Thomsen, C., Schineller, B., Heime, K., Heuken, M., Schön, O., Beccard, R.

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Minimally invasive collection of adipose tissue facilitates the study of eco‐physiology in small‐bodied mammals von Clerc, Jeff, Weller, Theodore J., Schineller, Jeffrey B., Szewczak, Joseph M., Fisher, Diana

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Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes von Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., Heuken, M.

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Important aspects for the mass production of GaN-based quantum devices grown by MOCVD von Soellner, J., Schoen, O., Alam, A., Schineller, B., Kaeppeler, J., Heuken, M.

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Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions von Guzenko, V. A., Thillosen, N., Dahmen, A., Calarco, R., Schäpers, Th, Houben, L., Luysberg, M., Schineller, B., Heuken, M., Kaluza, A.

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Luminescence and lasing in InGaN∕GaN multiple quantum well heterostructures grown at different temperatures von Yablonskii, G. P., Pavlovskii, V. N., Lutsenko, E. V., Zubialevich, V. Z., Gurskii, A. L., Kalisch, H., Szymakowski, A., Jansen, R. H., Alam, A., Schineller, B., Heuken, M.

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High efficiency integral III-N/II-VI blue-green laser converter von SOROKIN, S. V, SEDOVA, I. V, HEUKEN, M, IVANOV, S. V, TOROPOV, A. A, YABLONSKII, G. P, LUTSENKO, E. V, VOINILOVICH, A. G, DANILCHYK, A. V, DIKME, Y, KALISCH, H, SCHINELLER, B

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Chemical synthesis of bacterial autoinducers and analogs von Eberhard, Anatol, Schineller, Jeffrey B.

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Recent advances in MOCVD process technology for the growth of compound semiconductor devices von Schineller, B., Heuken, M.

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Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE) von Lim, P.H, Schineller, B, Schön, O, Heime, K, Heuken, M

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Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates von Yablonskii, G.P., Gurskii, A.L., Pavlovskii, V.N., Lutsenko, E.V., Zubialevich, V.Z., Shulga, T.S., Stognij, A.I., Kalisch, H., Szymakowski, A., Jansen, R.H., Alam, A., Schineller, B., Heuken, M.

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Compensation effects in Mg-doped GaN epilayers von Eckey, L, Von Gfug, U, Holst, J, Hoffmann, A, Schineller, B, Heime, K, Heuken, M, Schön, O, Beccard, R

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Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si von Lutsenko, E. V., Danilchyk, A. V., Tarasuk, N. P., Andryieuski, A. V., Pavlovskii, V. N., Gurskii, A. L., Yablonskii, G. P., Kalisch, H., Jansen, R. H., Dikme, Y., Schineller, B., Heuken, M.

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