Stable top-up operation at SPring-8 von Tanaka, Hitoshi, Adachi, Masatoshi, Aoki, Tsuyoshi, Asaka, Takao, Baron, Alfred, Daté, Shin, Fukami, Kenji, Furukawa, Yukito, Hanaki, Hirofumi, Hosoda, Naoyasu, Ishikawa, Tetsuya, Kimura, Hiroaki, Kobayashi, Kazuo, Kobayashi, Toshiaki, Kohara, Shinji, Kumagai, Noritaka, Masaki, Mitsuhiro, Masuda, Takemasa, Matsui, Sakuo, Mizuno, Akihiko, Nakamura, Takeshi, Nakatani, Takeshi, Noda, Takashi, Ohata, Toru, Ohkuma, Haruo, Ohshima, Takashi, Oishi, Masaya, Sasaki, Sigeki, Schimizu, Jun, Shoji, Masazumi, Soutome, Kouichi, Suzuki, Motohiro, Suzuki, Shinsuke, Suzuki, Yoshio, Takano, Shirou, Takao, Masaru, Takashima, Takeo, Takebe, Hideki, Takeuchi, Akihisa, Tamura, Kazuhiro, Tanaka, Ryotaro, Tanaka, Yoshihito, Taniuchi, Tsutomu, Taniuchi, Yukiko, Tsumaki, Kouji, Yamashita, Akihiro, Yanagida, Kenichi, Yoda, Yoshitaka, Yonehara, Hiroto, Yorita, Tetsuhiko, Yoshioka, Masamichi, Takata, Masaki

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Beam commissioning and achieved performance of SPring-8 storage ring phase-2 lattice with four magnet-free long straight sections von Tanaka, Hitoshi, Soutome, Kouichi, Takao, Masaru, Masaki, Mitsuhiro, Ohkuma, Haruo, Kumagai, Noritaka, Schimizu, Jun

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Perturbative formulation for nonlinear chromaticity of circular accelerators von Takao, Masaru, Tanaka, Hitoshi, Soutome, Kouichi, Schimizu, Jun

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4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations von Kaneko, Tomoaki, Nara, Jun, Kato, Koichi, Tajima, Nobuo, Schimizu, Tatsuo, Yamasaki, Takahiro, Nishikawa, Nobutaka, Ohno, Takahisa

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Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO 2 interface von Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa

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First-principles study on C=C defects near SiC/SiO 2 interface: Defect passivation by double-bond saturation von Tajima, Nobuo, Kaneko, Tomoaki, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa

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Construction of 4H-SiC/SiO2 interface models on a- and m-faces by first-principles calculations von Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa

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First-principles analysis on defect level distribution at 4H-SiC(0001)/SiO2 von Kaneko, Tomoaki, Yamasaki, Takahiro, Tajima, Nobuo, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa

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第一原理計算によるa-, m-面上の4H-SiC/SiO2 界面モデル構造の構築 von 金子, 智昭, 田島, 暢夫, 山崎, 隆浩, 奈良, 純, 清水, 達雄, 加藤, 弘一, 大野, 隆央

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4H-SiC/SiO2界面O2酸化の第一原理シミュレーション ～炭素クラスターの形成と拡散 von 山崎, 隆浩, 田島, 暢夫, 金子, 智昭, 奈良, 純, 清水, 達雄, 加藤, 弘一, 金田, 千穂子, 大野, 隆央

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4H-SiC(0001)/SiO2 界面での欠陥準位の分布の第一原理解析 von 金子, 智昭, 山崎, 隆浩, 田島, 暢夫, 奈良, 純, 清水, 達雄, 加藤, 弘一, 大野, 隆央

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4H-SiC(0001)表面酸化過程の動的シミュレーションおよび第一原理解析 von 山崎, 隆浩, 小山, 洋, 奈良, 純, 清水, 達雄, 加藤, 弘一, 大野, 隆央

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