Graphene‐SiO2 Interaction from Composites to Doping von Armano, Angelo, Buscarino, Gianpiero, Cannas, Marco, Gelardi, Franco Mario, Giannazzo, Filippo, Schiliró, Emanuela, Lo Nigro, Raffaella, Agnello, Simonpietro

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Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate von Panasci, Salvatore Ethan, Schilirò, Emanuela, Greco, Giuseppe, Cannas, Marco, Gelardi, Franco M., Agnello, Simonpietro, Roccaforte, Fabrizio, Giannazzo, Filippo

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Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications von Panasci, Salvatore Ethan, Schilirò, Emanuela, Roccaforte, Fabrizio, Giannazzo, Filippo

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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire von Panasci, Salvatore Ethan, Schilirò, Emanuela, Koos, Antal, Roccaforte, Fabrizio, Cannas, Marco, Agnello, Simonpietro, Pécz, Béla, Giannazzo, Filippo

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Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer von Fisichella, Gabriele, Schilirò, Emanuela, Di Franco, Salvatore, Fiorenza, Patrick, Lo Nigro, Raffaella, Roccaforte, Fabrizio, Ravesi, Sebastiano, Giannazzo, Filippo

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Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices von Lo Nigro, Raffaella, Fiorenza, Patrick, Greco, Giuseppe, Schilirò, Emanuela, Roccaforte, Fabrizio

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Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers von Lo Nigro, Raffaella, Schilirò, Emanuela, Mannino, Giovanni, Di Franco, Salvatore, Roccaforte, Fabrizio

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Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures von Giannazzo, Filippo, Schilirò, Emanuela, Greco, Giuseppe, Roccaforte, Fabrizio

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Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates von Schilirò, Emanuela, Greco, Giuseppe, Fiorenza, Patrick, Panasci, Salvatore Ethan, Di Franco, Salvatore, Cordier, Yvon, Frayssinet, Eric, Lo Nigro, Raffaella, Giannazzo, Filippo, Roccaforte, Fabrizio

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Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices von Giannazzo, Filippo, Panasci, Salvatore Ethan, Schilirò, Emanuela, Koos, Antal, Pécz, Béla

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Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy von Giannazzo, Filippo, Bosi, Matteo, Fabbri, Filippo, Schilirò, Emanuela, Greco, Giuseppe, Roccaforte, Fabrizio

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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen von Armano, Angelo, Buscarino, Gianpiero, Cannas, Marco, Gelardi, Franco Mario, Giannazzo, Filippo, Schilirò, Emanuela, Lo Nigro, Raffaella, Agnello, Simonpietro

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Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices von Lo Nigro, Raffaella, Schilirò, Emanuela, Fiorenza, Patrick, Roccaforte, Fabrizio

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Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials von Schilirò, Emanuela, Lo Nigro, Raffaella, Roccaforte, Fabrizio, Giannazzo, Filippo

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Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures von Fiorenza, Patrick, Schilirò, Emanuela, Greco, Giuseppe, Vivona, Marilena, Cannas, Marco, Giannazzo, Filippo, Lo Nigro, Raffaella, Roccaforte, Fabrizio

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High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors von Giannazzo, Filippo, Greco, Giuseppe, Schilirò, Emanuela, Lo Nigro, Raffaella, Deretzis, Ioannis, La Magna, Antonino, Roccaforte, Fabrizio, Iucolano, Ferdinando, Ravesi, Sebastiano, Frayssinet, Eric, Michon, Adrien, Cordier, Yvon

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Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation von Panasci, Salvatore Ethan, Alessi, Antonino, Buscarino, Gianpiero, Cannas, Marco, Gelardi, Franco Mario, Schilirò, Emanuela, Giannazzo, Filippo, Agnello, Simonpietro

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Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) von Galizia, Bruno, Fiorenza, Patrick, Bongiorno, Corrado, Pécz, Béla, Fogarassy, Zsolt, Schilirò, Emanuela, Giannazzo, Filippo, Roccaforte, Fabrizio, Nigro, Raffaella Lo

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Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition von Schilirò, Emanuela, Fiorenza, Patrick, Bongiorno, Corrado, Spinella, Corrado, Di Franco, Salvatore, Greco, Giuseppe, Lo Nigro, Raffaella, Roccaforte, Fabrizio

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Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate” von Panasci, Salvatore Ethan, Schilirò, Emanuela, Greco, Giuseppe, Cannas, Marco, Gelardi, Franco M., Agnello, Simonpietro, Roccaforte, Fabrizio, Giannazzo, Filippo

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