Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide von Almaev, Aleksei, Nikolaev, Vladimir, Butenko, Pavel, Stepanov, Sergey, Pechnikov, Aleksei, Yakovlev, Nikita, Sinyugin, Igor, Shapenkov, Sevastian, Scheglov, Mikhail

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Impact of Regional Climate Change on the Infrastructure and Operability of Railway Transport von Kostianaia, Evgeniia A., Kostianoy, Andrey G., Scheglov, Mikhail A., Karelov, Aleksey I., Vasileisky, Alexander S.

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy von Yakimov, Eugene B., Polyakov, Alexander Y., Nikolaev, Vladimir I., Pechnikov, Alexei I., Scheglov, Mikhail P., Yakimov, Eugene E., Pearton, Stephen J.

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Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates von Polyakov, Alexander Y., Nikolaev, Vladimir I., Tarelkin, Sergey A., Pechnikov, Alexei I., Stepanov, Sergey I., Nikolaev, Andrey E., Shchemerov, Ivan V., Yakimov, Eugene B., Luparev, Nikolay V., Kuznetsov, Mikhail S., Vasilev, Anton A., Kochkova, Anastasiya I., Voronova, Marina I., Scheglov, Mikhail P., Kim, Jihyun, Pearton, Stephen J.

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Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O., Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Pearton, Stephen J.

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Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates von Stepanov, Sergey, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei, Chernykh, Alexey, Odnobludov, Maxim, Andreeva, Valentina, Polyakov, Alexander Y.

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The Radiation Beamline of Novosibirsk Free-Electron Laser Facility Operating in Terahertz, Far-Infrared, and Mid-Infrared Ranges von Kubarev, Vitaly V., Sozinov, Gennady I., Scheglov, Mikhail A., Vodopyanov, Alexander V., Sidorov, Alexander V., Melnikov, Anatoly R., Veber, Sergey L.

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X-band EPR setup with THz light excitation of Novosibirsk Free Electron Laser: Goals, means, useful extras von Veber, Sergey L., Tumanov, Sergey V., Fursova, Elena Yu, Shevchenko, Oleg A., Getmanov, Yaroslav V., Scheglov, Mikhail A., Kubarev, Vitaly V., Shevchenko, Daria A., Gorbachev, Iaroslav I., Salikova, Tatiana V., Kulipanov, Gennady N., Ovcharenko, Victor I., Fedin, Matvey V.

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Three-wave X-ray diffraction in distorted epitaxial structures von Kyutt, Reginald, Scheglov, Mikhail

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Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity von Almaev, Aleksei, Nikolaev, Vladimir, Kopyev, Viktor, Shapenkov, Sevastian, Yakovlev, Nikita, Kushnarev, Bogdan, Pechnikov, Aleksei, Deng, Jinxiang, Izaak, Tatyana, Chikiryaka, Andrei, Scheglov, Mikhail, Zarichny, Anton

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UV Detectors Based on In₂O₃-Ga₂O₃ Composite Films von Almaev, Aleksei, Almaev, Dmitry, Nikolaev, Vladimir, Scheglov, Mikhail, Chikiryaka, Andrei, Pechnikov, Alexei, Kosmachev, Pavel, Korusenko, Petr, Koroleva, Aleksandra, Zhizhin, Evgeniy

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Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Halide Vapor Phase Epitaxy α‐ and ε‐Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates von Shapenkov, Sevastian, Vyvenko, Oleg, Ubyivovk, Evgeny, Medvedev, Oleg, Varygin, Georgiy, Chikiryaka, Andrey, Pechnikov, Alexei, Scheglov, Mikhail, Stepanov, Sergei, Nikolaev, Vladimir

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High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3 von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei, Korusenko, Petr

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Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei

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Self-powered UVC detectors based on α-Ga 2 O 3 with enchanted speed performance von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei

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Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O, Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Guzilova, Lyubov, Pearton, Stephen J

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