The electronic band structure of Ge1−xSnx in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-Moss effect von Polak, M P, Scharoch, P, Kudrawiec, R

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First-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: chemical trends versus experimental data von Polak, M P, Scharoch, P, Kudrawiec, R

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Nesting-like band gap in bismuth sulfide Bi2S3 von Linhart, W M, Zelewski, S J, Scharoch, P, Dybała, F, Kudrawiec, R

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Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2 von Kopaczek, J., Polak, M. P., Scharoch, P., Wu, K., Chen, B., Tongay, S., Kudrawiec, R.

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Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells von Kudrawiec, R., Kopaczek, J., Polak, M. P., Scharoch, P., Gladysiewicz, M., Misiewicz, J., Richards, R. D., Bastiman, F., David, J. P. R.

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Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions von Dybała, F., Polak, M. P., Kopaczek, J., Scharoch, P., Wu, K., Tongay, S., Kudrawiec, R.

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Optical markers of magnetic phase transition in CrSBr von Linhart, W. M, Rybak, M, Birowska, M, Scharoch, P, Mosina, K, Mazanek, V, Kaczorowski, D, Sofer, Z, Kudrawiec, R

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Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance von Zelazna, K., Polak, M. P., Scharoch, P., Serafinczuk, J., Gladysiewicz, M., Misiewicz, J., Dekoster, J., Kudrawiec, R.

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Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime von Polak, M P, Scharoch, P, Kudrawiec, R, Kopaczek, J, Winiarski, M J, Linhart, W M, Rajpalke, M K, Yu, K M, Jones, T S, Ashwin, M J, Veal, T D

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Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1−xBix dilute bismide with x ≤ 0.034 von Kopaczek, J, Kudrawiec, R, Polak, M P, Scharoch, P, Birkett, M, Veal, T D, Wang, K, Gu Y, Gong, Q

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First principles prediction of structural and electronic properties of TlxIn1−xN alloy von Winiarski, M.J., Scharoch, P., Polak, M.P.

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Ab initio study of InxGa1−xN – Performance of the alchemical mixing approximation von Scharoch, P., Winiarski, M.J., Polak, M.P.

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Anomalous band-gap bowing of AlN1−xPx alloy von Winiarski, M.J., Polak, M., Scharoch, P.

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Valley polarization investigation of GeS under high pressure von Oliva, R., Woźniak, T., Dybala, F., Tołłoczko, A., Kopaczek, J., Scharoch, P., Kudrawiec, R.

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Elastic Properties and the Band Gap of AlN x P 1 - x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches von Scharoch, P., Wittek, K., Winiarski, M. J., Polak, M. P.

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Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches von M. P. Polak, M. J. Winiarski, K. Wittek, P. Scharoch

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Ultrafast Optical Properties of Dense Electron Gas in Silicon Nanostructures von Sieradzki, A., Basta, M., Scharoch, P., Bigot, J.-Y.

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The electronic band structure of Ge 1− x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect von Polak, M P, Scharoch, P, Kudrawiec, R

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Hidden spin-polarized bands in semiconducting 2H-MoTe2 von Oliva, R, Woźniak, T, Dybala, F, Kopaczek, J, Scharoch, P, Kudrawiec, R

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Quantum-size effect in thin Al(110) slabs von Kiejna, A., Peisert, J., Scharoch, P.

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