Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces von Reina, Alfonso, Thiele, Stefan, Jia, Xiaoting, Bhaviripudi, Sreekar, Dresselhaus, Mildred S., Schaefer, Juergen A., Kong, Jing

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HREELS Investigation of the Surfaces of Nanocrystalline Diamond Films Oxidized by Different Processes von Ghodbane, Slimane, Haensel, Thomas, Coffinier, Yannick, Szunerits, Sabine, Steinmüller-Nethl, Doris, Boukherroub, Rabah, Ahmed, Syed Imad-Uddin, Schaefer, Juergen A

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Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy von Lorenz, Pierre, Haensel, Thomas, Gutt, Richard, Koch, Roland J., Schaefer, Juergen A., Krischok, Stefan

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Electronic properties of organic semiconductor blends: Ambipolar mixtures of phthalocyanine and fullerene von Opitz, Andreas, Bronner, Markus, Brütting, Wolfgang, Himmerlich, Marcel, Schaefer, Juergen A., Krischok, Stefan

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A compact reciprocating vacuum microtribometer von Kosinskiy, Mikhail, Ahmed, Syed Imad-Uddin, Liu, Yonghe, Schaefer, Juergen A.

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Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices von Himmerlich, Marcel, Koufaki, Maria, Ecke, Gernot, Mauder, Christof, Cimalla, Volker, Schaefer, Juergen A, Kondilis, Antonis, Pelekanos, Nikos T, Modreanu, Mircea, Krischok, Stefan, Aperathitis, Elias

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Friction and Wear Properties of WC/C Nano-Scale Multilayer Coatings on Technical Surfaces von Kosinskiy, Mikhail, Ahmed, Syed Imad-Uddin, Liu, Yonghe, Gubisch, Maik, Mastylo, Rostyslav, Spiess, Lothar, Schaefer, Juergen A.

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Pyrolysis of wood-based polymer compounds von Haensel, Thomas, Comouth, Andreas, Zydziak, Nicolas, Bosch, Eva, Kauffmann, Axel, Pfitzer, Juergen, Krischok, Stefan, Schaefer, Juergen A., Ahmed, Syed Imad-Uddin

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Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS von Haensel, Thomas, Uhlig, Jens, Koch, Roland J., Ahmed, Syed Imad-Uddin, Garrido, José A., Steinmüller-Nethl, Doris, Stutzmann, Martin, Schaefer, Juergen A.

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Shear of thin polytetrafluoroethylene films on Si substrate determined by laser interferometer von Liu, Yonghe, Ahmed, S.I.-U., Schaefer, Juergen A.

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Microtribological properties of silicon and silicon coated with self-assembled monolayers: effect of applied load and sliding velocity von Hild, Wolfram, Ahmed, Syed Imad-Uddin, Hungenbach, Gudrun, Scherge, Matthias, Schaefer, Juergen A.

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Effect of Cr2O3 on the O-18 Tracer Incorporation in SOFC Materials von Finsterbusch, Martin, Lussier, Alexandre, Negusse, Ezana, Zhu, Zihua, Smith, Richard J., Schaefer, Jurgen A., Idzerda, Yves U.

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Effect of Cr sub(2)O sub(3) on the super(18)O tracer incorporation in SOFC materials von Finsterbusch, Martin, Lussier, Alexandre, Negusse, Ezana, Zhu, Zihua, Smith, Richard J, Schaefer, Juergen A, Idzerda, Yves U

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Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy: Analysis of polar GaN surfaces with photoelectron spectroscopy and HREELS von Lorenz, Pierre, Haensel, Thomas, Gutt, Richard, Koch, Roland J., Schaefer, Juergen A., Krischok, Stefan

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Determination of the valence band offsets at HfO 2 /InN(0001) and InN/In 0.3 Ga 0.7 N(0001) heterojunctions using X‐ray photoelectron spectroscopy von Eisenhardt, Anja, Knübel, Andreas, Schmidt, Ralf, Himmerlich, Marcel, Wagner, Joachim, Schaefer, Juergen A., Krischok, Stefan

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Effect of Cr 2O 3 on the 18O tracer incorporation in SOFC materials von Finsterbusch, Martin, Lussier, Alexandre, Negusse, Ezana, Zhu, Zihua, Smith, Richard J., Schaefer, Juergen A., Idzerda, Yves U.

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Changes in the valence band structure of as-grown InN(0001)-2 × 2 surfaces upon exposure to oxygen and water von Eisenhardt, Anja, Reiß, Stephanie, Himmerlich, Marcel, Schaefer, Juergen A., Krischok, Stefan

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Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy von Eisenhardt, Anja, Knübel, Andreas, Schmidt, Ralf, Himmerlich, Marcel, Wagner, Joachim, Schaefer, Juergen A., Krischok, Stefan

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Determination of the valence band applications and materials science offsets at HfO2/lnN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy von EISENHARDT, Anja, KNÜBEL, Andreas, SCHMIDT, Ralf, HIMMERLICH, Marcel, WAGNER, Joachim, SCHAEFER, Juergen A, KRISCHOK, Stefan

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Effect of Cr2O3 on the 18O tracer incorporation in SOFC materials von Finsterbusch, Martin, Lussier, Alexandre, Negusse, Ezana, Zhu, Zihua, Smith, Richard J., Schaefer, Juergen A., Idzerda, Yves U.

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