[P3Se4]+: A Binary Phosphorus Selenium Cation von Feldmann, K.-O., Wiegand, T., Ren, J., Eckert, H., Breternitz, J., Groh, M. F., Müller, U., Ruck, M., Maryasin, B., Ochsenfeld, C., Schön, O., Karaghiosoff, K., Weigand, J. J.

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Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach von Dauelsberg, M., Brien, D., Püsche, R., Schön, O., Yakovlev, E.V., Segal, A.S., Talalaev, R.A.

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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers von Eckey, L., von Gfug, U., Holst, J., Hoffmann, A., Kaschner, A., Siegle, H., Thomsen, C., Schineller, B., Heime, K., Heuken, M., Schön, O., Beccard, R.

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Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy von Gerthsen, D., Hahn, E., Neubauer, B., Rosenauer, A., Schön, O., Heuken, M., Rizzi, A.

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Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE) von Lim, P.H, Schineller, B, Schön, O, Heime, K, Heuken, M

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Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN von Schön, O, Schineller, B, Heuken, M, Beccard, R

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Compensation effects in Mg-doped GaN epilayers von Eckey, L, Von Gfug, U, Holst, J, Hoffmann, A, Schineller, B, Heime, K, Heuken, M, Schön, O, Beccard, R

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InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition von Gerthsen, D., Neubauer, B., Rosenauer, A., Stephan, T., Kalt, H., Schön, O., Heuken, M.

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Nearly strain-free AlGaN on (0 0 0 1) sapphire: X-ray measurements and a new crystallographic growth model von Krost, A., Bläsing, J., Schulze, F., Schön, O., Alam, A., Heuken, M.

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Influence of growth conditions on electrical characteristics of AlN on SiC von Zetterling, C.-M., Östling, M., Nordell, N., Schön, O., Deschler, M.

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The DNA sequence of human chromosome 21 von Sakaki, Y, Hattori, M, Fujiyama, A, Taylor, T. D, Watanabe, H, Yada, T, Park, H.-S, Toyoda, A, Ishii, K, Totoki, Y, Choi, D.-K, Soeda, E, Ohki, M, Takagi, T, Taudien, S, Blechschmidt, K, Polley, A, Menzel, U, Delabar, J, Kumpf, K, Lehmann, R, Patterson, D, Reichwald, K, Rump, A, Schillhabel, M, Schudy, A, Zimmermann, W, Rosenthal, A, Kudoh, J, Shibuya, K, Kawasaki, K, Asakawa, S, Shintani, A, Sasaki, T, Nagamine, K, Mitsuyama, S, Antonarakis, S. E, Minoshima, S, Shimizu, N, Nordsiek, G, Hornischer, K, Brandt, P, Scharfe, M, Schön, O, Desario, A, Reichelt, J, Kauer, G, Blöcker, H, Ramser, J, Beck, A, Klages, S, Hennig, S, Riesselmann, L, Dagand, E, Haaf, T, Wehrmeyer, S, Borzym, K, Gardiner, K, Nizetic, D, Francis, F, Lehrach, H, Reinhardt, R, Yaspo, M.-L

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The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE von Schineller, B, Guttzeit, A, Lim, P.H, Schwambera, M, Heime, K, Schön, O, Heuken, M

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Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm von Yablonskii, G. P., Lutsenko, E. V., Pavlovskii, V. N., Marko, I. P., Gurskii, A. L., Zubialevich, V. Z., Mudryi, A. V., Schön, O., Protzmann, H., Lünenbürger, M., Schineller, B., Heuken, M., Kalisch, H., Heime, K.

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Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE von Gurskii, A.L., Marko, I.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Yablonskii, G.P., Schineller, B., Schön, O., Heuken, M.

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Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE von Schineller, B, Guttzeit, A, Vertommen, F, Schön, O, Heuken, M, Heime, K, Beccard, R

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Aggregation-resistant domain antibodies selected on phage by heat denaturation von Winter, Greg, Jespers, Laurent, Schon, Oliver, Famm, Kristoffer

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Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE von Schineller, B., Lim, P.H., Schön, O., Protzmann, H., Heuken, M., Heime, K.

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Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy von Yablonskii, G. P., Gurskii, A. L., Lutsenko, E. V., Marko, I. P., Schineller, B., Guttzeit, A., Schön, O., Heuken, M., Heime, K., Beccard, R., Schmitz, D., Juergensen, H.

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High-Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures von Marko, I.P., Lutsenko, E.V., Pavlovskii, V.N., Yablonskii, G.P., Schön, O., Protzmann, H., Lünenbürger, M., Heuken, M., Schneller, B., Heime, K.

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Luminescence Properties of Strained GaN Epilayers and Spatial Configurations of Silicon Impurity and Related Defects von Gurskii, A.L., Lutsenko, E.V., Zelenkovskii, V.M., Bezjazychnaja, T.V., Pavlovskii, V.N., Zubialevich, V.Z., Schineller, B., Schön, O., Yablonskii, G.P., Heuken, M.

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