Thermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum von Nomura, Masahiro, Nakagawa, Junki, Sawano, Kentarou, Maire, Jeremie, Volz, Sebastian

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High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces von Taniguchi, Tatsuhiko, Ishibe, Takafumi, Naruse, Nobuyasu, Mera, Yutaka, Alam, Md Mahfuz, Sawano, Kentarou, Nakamura, Yoshiaki

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Temperature Dependence of Two-Terminal Local Magnetoresistance in Co-Based Heusler Alloy/Ge Lateral Spin-Valve Devices von Yamada, Michihiro, Naito, Takahiro, Sumi, Kazuaki, Sawano, Kentarou, Hamaya, Kohei

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Semiballistic thermal conduction in polycrystalline SiGe nanowires von Okamoto, Noboru, Yanagisawa, Ryoto, Anufriev, Roman, Mahfuz Alam, Md, Sawano, Kentarou, Kurosawa, Masashi, Nomura, Masahiro

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Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium von Yamada, Michihiro, Sawano, Kentarou, Uematsu, Masashi, Itoh, Kohei M.

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Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials von Yamasaka, Shuto, Watanabe, Kentaro, Sakane, Shunya, Takeuchi, Shotaro, Sakai, Akira, Sawano, Kentarou, Nakamura, Yoshiaki

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Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators von Taniguchi, Tatsuhiko, Ishibe, Takafumi, Hosoda, Ryoya, Wagatsuma, Youya, Alam, Md. Mahfuz, Sawano, Kentarou, Uenuma, Mutsunori, Uraoka, Yukiharu, Yamashita, Yuichiro, Mori, Nobuya, Nakamura, Yoshiaki

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Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers von Muranaka, Shuto, Nogamida, Satoshi, Hara, Kosuke O., Sawano, Kentarou, Hoshi, Yusuke

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High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity von Sakane, Shunya, Ishibe, Takafumi, Hinakawa, Takahiro, Naruse, Nobuyasu, Mera, Yutaka, Mahfuz Alam, Md, Sawano, Kentarou, Nakamura, Yoshiaki

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Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements von Yamada, Michihiro, Tsukahara, Makoto, Fujita, Yuichi, Naito, Takahiro, Yamada, Shinya, Sawano, Kentarou, Hamaya, Kohei

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Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing von Yamada, Kodai, Wagatsuma, Youya, Okada, Kazuya, Hoshi, Yusuke, Sawano, Kentarou

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Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100) von Alam, Md Mahfuz, Hoshi, Yusuke, Sawano, Kentarou

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Effects of post annealing on in-situ n-doped Ge-on-Si von Kumazawa, Yuta, Xu, Xuejun, Maruizumi, Takuya, Sawano, Kentarou

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Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures von Yamada, Michihiro, Kuroda, Fumiaki, Tsukahara, Makoto, Yamada, Shinya, Fukushima, Tetsuya, Sawano, Kentarou, Oguchi, Tamio, Hamaya, Kohei

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Strong Room-Temperature Electroluminescence from Ge-on-Si by Precise in-situ Doping Control von Yamada, Kodai, Hoshi, Yusuke, Sawano, Kentarou

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Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve device von Yamada, Michihiro, Naito, Takahiro, Tsukahara, Makoto, Yamada, Shinya, Sawano, Kentarou, Hamaya, Kohei

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Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes von Kasahara, Kenji, Fujita, Yuichi, Yamada, Shinya, Sawano, Kentarou, Miyao, Masanobu, Hamaya, Kohei

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Mechanism of crack formation in strained SiGe(111) layers von Wagatsuma, Youya, Mahfuz Alam, Md, Okada, Kazuya, Kanesawa, Rena, Yamada, Michihiro, Hamaya, Kohei, Sawano, Kentarou

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Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness von Arimoto, Keisuke, Fujisawa, Taisuke, Namiuchi, Daichi, Onogawa, Atsushi, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu

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(Digital Presentation) Epitaxially Grown of SiGe on Ge Microbridge and Observation of Strong Resonant Light Emission von Inoue, Takahiro, Wagatsuma, Youya, Ikegaya, Reo, Odashima, Ayaka, Nagao, Masaki, Sawano, Kentarou

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