Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate von Paek, J. H., Nishiwaki, T., Yamaguchi, M., Sawaki, N.

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Annealing effect on threading dislocations in a GaN grown on Si substrate von Iwata, H., Kobayashi, H., Kamiya, T., Kamei, R., Saka, H., Sawaki, N., Irie, M., Honda, Y., Amano, H.

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Resonant Raman and FTIR spectra of carbon doped GaN von Ito, S., Kobayashi, H., Araki, K., Suzuki, K., Sawaki, N., Yamashita, K., Honda, Y., Amano, H.

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Growth of non-polar (1 1 2¯ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE von Tanikawa, T., Rudolph, D., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.

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Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy von Honda, Y., Kuroiwa, Y., Yamaguchi, M., Sawaki, N.

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Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE von Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.

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Structural and optical properties of a catalyst-free GaAs/AlGaAs core–shell nano/microwire grown on (1 1 1)Si substrate von Paek, J.H., Nishiwaki, T., Yamaguchi, M., Sawaki, N.

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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on ( 1 1 ¯ 01 ) semipolar GaN von Wu, Z. H., Tanikawa, T., Murase, T., Fang, Y.-Y., Chen, C. Q., Honda, Y., Yamaguchi, M., Amano, H., Sawaki, N.

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Al doping in ( 1 − 101 ) GaN films grown on patterned (001)Si substrate von Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.

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Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate von Hikosaka, T., Narita, T., Honda, Y., Yamaguchi, M., Sawaki, N.

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Surface plasmon-enhanced photoluminescence from a single quantum well von Hecker, N. E., Höpfel, R. A., Sawaki, N., Maier, T., Strasser, G.

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HVPE growth of semi-polar (1 1 2¯ 2)GaN on GaN template (1 1 3)Si substrate von Suzuki, N., Uchida, T., Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N.

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MOVPE growth and properties of GaN on (1 1 1)Si using an AlInN intermediate layer von Irie, M., Koide, N., Honda, Y., Yamaguchi, M., Sawaki, N.

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Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates von Feng, I. W., Cao, X. K., Li, J., Lin, J. Y., Jiang, H. X., Sawaki, N., Honda, Y., Tanikawa, T., Zavada, J. M.

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Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Ram... von Bertram, F., Riemann, T., Christen, J., Kaschner, A., Hoffmann, A., Thomsen, C., Hiramatsu, K., Shibata, T., Sawaki, N.

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Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy von HACKE, P, DETCHPROHM, T, HIRAMATSU, K, SAWAKI, N

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Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates von Hikosaka, T., Tanikawa, T., Honda, Y., Yamaguchi, M., Sawaki, N.

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Analysis of deep levels in n -type GaN by transient capacitance methods von Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Tadatomo, K., Miyake, K.

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Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si von Tanikawa, T., Kagohashi, Y., Honda, Y., Yamaguchi, M., Sawaki, N.

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MBE growth of one-dimensionally ordered AlInAs quantum dots on a patterned GaAs substrate von Nishiwaki, T, Yamaguchi, M, Sawaki, N

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