Observation of anisotropic microstructural changes during cycling in LiNi0.5Co0.2Mn0.3O2 cathode material von Kuriyama, Hiromichi, Saruwatari, Hidesato, Satake, Hideki, Shima, Amika, Uesugi, Fumihiko, Tanaka, Hiroki, Ushirogouchi, Tooru

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Interfacial properties of single-crystalline CeO2 high- k gate dielectrics directly grown on Si (111) von Nishikawa, Yukie, Yamaguchi, Takeshi, Yoshiki, Masahiko, Satake, Hideki, Fukushima, Noburu

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(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs von Mise, N., Migita, S., Watanabe, Y., Satake, H., Nabatame, T., Toriumi, A.

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Rapid analysis of polybrominated diphenyl ethers by ion attachment mass spectrometry von Sato, Yuka, Oki, Mitsuhiro, Kondo, Asato, Takenaka, Miyuki, Satake, Hideki

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Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure von Yamaguchi, Takeshi, Satake, Hideki, Fukushima, Noburu, Toriumi, Akira

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SUPPRESSION OF STRESS-INDUCED LEAKAGE CURRENT OF WET AND DRY SiO2 BY SiD4 POLY-Si GATE ELECTRODE von Mitani, Y, Satake, H

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Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface von Mitani, Yuichiro, Satake, Hideki

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Observation of anisotropic microstructural changes during cycling in LiNi sub(0.5)Co sub(0.2)Mn sub(0.3)O sub(2) cathode material von Kuriyama, Hiromichi, Saruwatari, Hidesato, Satake, Hideki, Shima, Amika, Uesugi, Fumihiko, Tanaka, Hiroki, Ushirogouchi, Tooru

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Common origin for stress-induced leakage current and electron trap generation in SiO2 von Satake, Hideki, Toriumi, Akira

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Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics von Mizubayashi, Wataru, Yasuda, Naoki, Okada, Kenji, Ota, Hiroyuki, Hisamatsu, Hirokazu, Iwamoto, Kunihiko, Tominaga, Koji, Yamamoto, Katsuhiko, Horikawa, Tsuyoshi, Nabatame, Toshihide, Satake, Hideki, Toriumi, Akira

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Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO[sub 2] Epitaxially Grown on Si(111) von Nishikawa, Yukie, Matsushita, Daisuke, Satou, Nobutaka, Yoshiki, Masahiko, Schimizu, Tatsuo, Yamaguchi, Takeshi, Satake, Hideki, Fukushima, Noburu

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Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides von Satake, Hideki, Yasuda, Naoki, Takagi, Shin-ichi, Toriumi, Akira

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A Study of the Effect of Deuterium on Stress-Induced Leakage Current von Mitani, Yuichiro, Satake, Hideki, Ito, Hitoshi, Toriumi, Akira

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Temperature dependent hole fluence to breakdown in thin gate oxides under Fowler–Nordheim electron tunneling injection von Satake, Hideki, Toriumi, Akira

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Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides von Mitani, Y., Satake, H., Nakasaki, Y., Toriumi, A.

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Impact of Deuterium and Fluorine Incorporation on Weibull Distribution of Dielectric Breakdown in Gate Dielectrics von Mitani, Yuichiro, Satake, Hideki, Toriumi, Akira

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Dielectric breakdown mechanism of thin-SiO2 studied by the post-breakdown resistance statistics von Satake, H, Toriumi, A

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Band diagram and carrier conduction mechanisms in ZrO2 MIS structures von Yamaguchi, T, Satake, H, Fukushima, N

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Physical random number generator based on MOS structure after soft breakdown von Yasuda, S., Satake, H., Tanamoto, T., Ohba, R., Uchida, K., Fujita, S.

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Suppression of Stress-Induced Leakage Current of Wet and Dry SiO 2 by SiD 4 Poly-Si Gate Electrode von Mitani, Yuichiro, Satake, Hideki

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