A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD von Bogdanova, E. V.

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Effect of ion beam etching on metal-Si and metal-GaAs barriers von Sarov, GA

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Barrier optimization of metal-semiconductor junctions for high power Schottky rectifiers von Sarov, GA, Katardjiev, IV, Stoeva, NI

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