On the nanostructure of pure amorphous silicon von Williamson, D. L., Roorda, S., Chicoine, M., Tabti, R., Stolk, P. A., Acco, S., Saris, F. W.

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Hardness and corrosion resistance of single-phase nitride and carbide on iron von Weber, T., de Wit, L., Saris, F.W., Königer, A., Rauschenbach, B., Wolf, G.K., Krauss, S.

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Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon von Stolk, P. A., Saris, F. W., Berntsen, A. J. M., Weg, W. F. van der, Sealy, L. T., Barklie, R. C., Krötz, G., Müller, G.

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Search for giant magnetic moments in ion-beam-synthesized α″-Fe16N2 von WEBER, T, DE WIT, L, SARIS, F. W, SCHAAF, P

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Thermodynamic stability of iron nitrides at temperatures below 350 degrees C von de Wit L, Weber, T, Custer, JS, Saris, FW

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Use of the effective heat of formation rule for predicting phase formation sequence in AlNi systems von Pretorius, R., de Reus, R., Vredenberg, A.M., Saris, F.W.

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Dislocation formation and B transient diffusion in C coimplanted Si von Cacciato, A., Klappe, J. G. E., Cowern, N. E. B., Vandervost, W., Biró, L. P., Custer, J. S., Saris, F. W.

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Oxygen in titanium nitride diffusion barriers von SINKE, W, FRIJLINK, G. P. A, SARIS, F. W

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Transient structural relaxation of amorphous silicon von Sinke, W., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S., Saris, F.W.

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Avoiding end-of-range dislocations in ion-implanted silicon von Acco, S., Custer, J.S., Saris, F.W.

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Nonthermal pulsed laser annealing of Si; plasma annealing von Van Vechten, J.A., Tsu, R., Saris, F.W.

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Ion implantation into amorphous solids von van der Weg, W.F., Berntsen, A.J.M., Saris, F.W., Polman, A.

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Improved device performance by multistep or carbon co-implants von Liefting, R., Wijburg, R.C.M., Custer, J.S., Wallinga, H., Saris, F.W.

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Materials modification by MeV ion implantation von Saris, FW

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Surface treatment by low energy metal ion irradiation von Weber, T., Verhoeven, J., Saris, F.W., Osipowicz, T., Münz, W.D.

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Dislocation formation in silicon implanted at different temperatures von Liefting, J.R., Custer, J.S., Schreutelkamp, R.J., Saris, F.W.

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REDUCTION OF SECONDARY DEFECTS IN MEV ION-IMPLANTED SILICON BY MEANS OF ION-BEAM DEFECT ENGINEERING von WANG, ZL, ZHANG, BX, ZHAO, QT, QI, L, LIEFTING, SCHREUTELKAMP, RJ, SARIS, FW

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Ion beam mixing of chromium on silicon nitride ceramics von Bolse, Wolfgang, Peteves, Stathis D., Vredenberg, Arjen M., Saris, Frans W.

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Mass and energy distribution of particles sputter etched from Si in a XeF2 environment von Haring, R. A., Haring, A., Saris, F. W., de Vries, A. E.

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Avoiding preamorphization damage in MeV heavy ion-implanted silicon von SCHREUTELKAMP, R. J, CUSTER, J. S, LIEFTING, J. R, SARIS, F. W

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