GaN single crystal growth using high-purity Na as a flux von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sarayama, Seiji, DiSalvo, Francis J

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Single crystal growth of GaN using a Ga melt in Na vapor von Yamada, Takahiro, Yamane, Hisanori, Iwata, Hirokazu, Sarayama, Seiji

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Conditions for seeded growth of GaN crystals by the Na flux method von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sarayama, Seiji, DiSalvo, Francis J

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Single crystal growth of GaN by the temperature gradient Na flux method von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sarayama, Seiji, Iwata, Hirokazu, DiSalvo, Francis J.

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Growth of 5 mm GaN Single Crystals at 750 °C from an Na−Ga Melt von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sarayama, Seiji, DiSalvo, Francis J

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Morphology and Polarity of GaN Single Crystals Synthesized by the Na Flux Method von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Kajiwara, Takashi, Sarayama, Seiji, DiSalvo, Francis J

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Time Dependence of the Growth Morphology of GaN Single Crystals Prepared in a Na–Ga Melt von Yamane, Hisanori, Aoki, Masato, Yamada, Takahiro, Shimada, Masahiko, Goto, Hiroki, Goto, Takenari, Makino, Hisao, Yao, Takafumi, Sarayama, Seiji, Iwata, Hirokazu, DiSalvo, Francis J.

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Influence of 3d-Transition-Metal Additives on Single Crystal Growth of GaN by the Na Flux Method von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sarayama, Seiji, Iwata, Hirokazu, Disalvo, Francis J.

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Dissolution and Recrystallization of GaN in Molten Na von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sarayama, Seiji, Iwata, Hirokazu, Disalvo, Francis J.

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The process of GaN single crystal growth by the Na flux method with Na vapor von Yamada, Takahiro, Yamane, Hisanori, Iwata, Hirokazu, Sarayama, Seiji

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Growth of GaN single crystals from a Na–Ga melt at 750°C and 5MPa of N2 von Aoki, Masato, Yamane, Hisanori, Shimada, Masahiko, Sekiguchi, Takashi, Hanada, Takashi, Yao, Takafumi, Sarayama, Seiji, DiSalvo, Francis J

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Growth of GaN single crystals from a Na-Ga melt at 750°C and 5 MPa of N2 von AOKI, M, YAMANE, H, SHIMADA, M, SEKIGUCHI, T, HANADA, T, YAO, T, SARAYAMA, S, DISALVO, F. J

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Crystal producing method von Sarayama, Seiji, Iwata, Hirozaku

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Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more von Murakami, Akishige, Miyoshi, Naoya, Shibata, Masatomo, Sato, Takashi, Yoshida, Takehiro, Sarayama, Seiji

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Crystal manufacturing apparatus von IWATA HIROKAZU, SARAYAMA SEIJI

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Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate von IWATA HIROKAZU, SARAYAMA SEIJI

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Method for manufacturing group 13 nitride crystal and group 13 nitride crystal von Miyoshi, Naoya, Wada, Junichi, Sarayama, Seiji, Hayashi, Masahiro, Satoh, Takashi

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Crystal growth apparatus and manufacturing method of group III nitride crystal von Iwata Hirokazu, Fuse Akihiro, Sarayama Seiji

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CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE von IWATA HIROKAZU, SARAYAMA SEIJI

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METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL von SARAYAMA, Seiji, SATOH, Takashi, WADA, Junichi, HAYASHI, Masahiro

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