Base drive energy recovery for a silicon bipolar junction transistors von Zhu, Hui, Sweet, Mark, Sankara Narayanan, E.M

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The world’s first high voltage GaN-on-Diamond power semiconductor devices von Baltynov, Turar, Unni, Vineet, Narayanan, E.M. Sankara

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Realizing high breakdown voltages (>600 V) in partial SOI technology von Tadikonda, Ramakrishna, Hardikar, Shyam, Sankara Narayanan, E.M.

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Current saturation behavior in GaN polarization superjunction hybrid diode von Du, Y, Sankara Narayanan, E.M, Kawai, H, Yagi, S, Narui, H

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Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode von Balachandran, A., Sweet, M., Ngwendson, L., Sankara Narayanan, E.M., Ray, Shona, Quaresma, Henrique, Bruce, John

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Fully Isolated High Side and Low Side LIGBTs in Junction Isolation Technology von Green, D.W., Sankara Narayanan, E.M.

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RESURFed Quasi Lateral IGBT Structure for High Current PICs von Sankara Narayanan, E.M., Ramakrishna, T., Green, D.W.

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Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology von Vershinin, K., Sweet, M., Ngwendson, L., Thomson, J., Waind, P., Bruce, J., Sankara Narayanan, E.M.

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ISPSD `07 Best Paper Award; Record-Low On-Resistance for 0.35 μm based Integrated XTREMOSTM Transistors von Moens, Peter, Bauwens, Filip, Desoete, Bart, Baele, Joris, Vershinin, Konstantin, Ziad, Hocine, Narayanan, E.M. Sankara, Tack, Marnix

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Analysis and optimisation of the trench gated emitter switched thyristor von Spulber, O., Sweet, M., Vershinin, K., Luther-King, N., De Souza, M.M., Sankara Narayanan, E.M.

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A segmented anode, npn controlled lateral insulated gate bipolar transistor von Hardikar, S., Xu, Y.Z., De Souza, M.M., Sankara Narayanan, E.M.

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Analysis of the breakdown voltage in SOI and SOS technologies von Roig, J, Vellvehi, M, Flores, D, Rebollo, J, Millan, J, Krishnan, S, De Souza, M.M, Sankara Narayanan, E.M

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A novel area efficient floating field limiting ring edge termination technique von De Souza, M.M, Subhas Chandra Bose, J.V, Sankara Narayanan, E.M, Pease, T.J, Ensell, G, Humphreys, J

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A study of fully coordinated precursors in silicon using the Ackland potential von De Souza, M.M., Chichkine, M.P., Sankara Narayanan, E.M.

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1200 V fully implanted JI technology von Hardikar, S., Xu, Y.Z., De Souza, M.M., Sankara Narayanan, E.M.

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A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors von De Souza, M.M., Wang, J., Manhas, S., Sankara Narayanan, E.M., Oates, A.S.

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Radial confinement: concept for lateral power devices von Krishnan, S., De Souza, M.M., Sankara Narayanan, E.M., Vellvehi, M., Flores, D., Rebollo, J., Millan, J.

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The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology von Luther-King, N, Sweet, M, Spulber, O, Vershinin, K, Ngw, C.K, Bose, S.C, De Souza, M.M, Sankara Narayanan, E.M

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Zero Voltage Switching of a 1200V PT Clustered Insulated Gate Bipolar Transistor von Sweet, M.R., Nicholls, J., Vershinin, K.V., Spulber, O., Ngwendson, L., Sankara Narayanan, E.M.

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Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching von Green, D.W., Hardikar, S., Sweet, M., Vershinin, K.V., Sankara Narayanan, E.M.

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