Performance Evaluation of 10-kV SiC Trench Clustered IGBT von Menon, K. G., Nakajima, A., Ngwendson, L., Narayanan, E. M. Sankara

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GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept von Nakajima, Akira, Sumida, Yasunobu, Dhyani, Mahesh H, Kawai, Hiroji, Narayanan, E M Sankara

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Erratum: Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability [Jpn. J. Appl. Phys. 62 014501 (2023)] von Sheikhan, Alireza, Narayanankutty, Gopika, Narayanan, E. M. Sankara, Kawai, Hiroji, Yagi, Shuichi, Narui, Hironobu

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Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability von Sheikhan, Alireza, Narayanankutty, Gopika, Narayanan, E. M. Sankara, Kawai, Hiroji, Yagi, Shuichi, Narui, Hironobu

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Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis von Unni, Vineet, Narayanan, E. M. Sankara

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GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate von Nakajima, A., Sumida, Yasunobu, Kawai, Hiroji, Unni, Vineet, Menon, Kalyani G., Dhyani, Mahesh H., Narayanan, E. M. Sankara

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Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells von Long, Hongyao, Sweet, Mark R, Ngwendson, Luther-King, Sankara Narayanan, E. M

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A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs von Vershinin, K., Moens, P., Bauwens, F., Narayanan, E.M.S., Tack, M.

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Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC von Sankara Narayanan, Ekkanath Madathil, Bruce, Graham P., Menon, Kalyani G., Ngwendson, Luther King, Nakajima, Akira

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Comparison of the thermal properties of polycrystalline diamond and aluminium nitride substrates von Balakrishnan, Manoj, Sweet, M. R., Sankara Narayanan, E. M.

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The world’s first high voltage GaN-on-Diamond power semiconductor devices von Baltynov, Turar, Unni, Vineet, Narayanan, E.M. Sankara

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Enhanced short-circuit performance of 3.3kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in NPT technology with RTA Anode von Balachandran, A., Sweet, M., Ngwendson, L., Sankara Narayanan, E.M., Ray, Shona, Quaresma, Henrique, Bruce, John

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Transient substrate currents in junction-isolated lateral IGBT von Hardikar, S., Green, D.W., Narayanan, E.M.S.

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High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface von Nakajima, Akira, Sumida, Yasunobu, Dhyani, Mahesh H, Kawai, Hiroji, Narayanan, E. M. Sankara

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Experimental Demonstration of 3.3kV Planar CIGBT In NPT Technology von Sweet, M., Luther-King, N., Kong, S.T., Narayanan, E.M.S., Bruce, J., Ray, S.

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A Study of the Influence of Technology on the Negative Gate Capacitance in 1.2kV IGBTs von Kong, S.T., Ngwendson, L., Sweet, M., Narayanan, E.M.S.

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A novel trench clustered insulated gate bipolar transistor (TCIGBT) von Spulber, O., Sweet, M., Vershinin, K., Ngw, C.K., Ngwendson, L., Bose, J.V.S.C., De Souza, M.M., Sanakara Narayanan, E.M.

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Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period von Long, Hong, Sweet, Mark, Narayanan, Sankara

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A segmented anode, npn controlled lateral insulated gate bipolar transistor von Hardikar, S., Xu, Y.Z., De Souza, M.M., Sankara Narayanan, E.M.

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Analysis of the breakdown voltage in SOI and SOS technologies von Roig, J, Vellvehi, M, Flores, D, Rebollo, J, Millan, J, Krishnan, S, De Souza, M.M, Sankara Narayanan, E.M

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