Resource-Efficient SRAM-Based Ternary Content Addressable Memory von Ahmed, Ali, Kyungbae Park, Sanghyeon Baeg

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Quantification of Substrate Current Caused by an Individual Trap at Different Locations and Energies, Prevailing on Si/SiO₂ Interface or Si Substrate of n-MOSFETs von Shahzadi, Nosheen, Baeg, Sanghyeon

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Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory von Ullah, Z., Kim Ilgon, Sanghyeon Baeg

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Active Precharge Hammering to Monitor Displacement Damage Using High-Energy Protons in 3x-nm SDRAM von Lim, Chulseung, Park, Kyungbae, Baeg, Sanghyeon

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SRAM Interleaving Distance Selection With a Soft Error Failure Model von Sanghyeon Baeg, ShiJie Wen, Wong, R.

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A [Formula Omitted] Compensation Technique in Delay Testing by Disconnecting Power Pins von Sanghyeon Baeg, Sanghyeon Baeg

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Failure Analysis of Galaxy S7 Edge Smartphone Using Neutron Radiation von Bak, Geunyong, Baeg, Sanghyeon

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Fault Coverage Re-Evaluation of Memory Test Algorithms With Physical Memory Characteristics von Lee, Kiseok, Kim, Jeonghwan, Baeg, Sanghyeon

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Null Detector Circuit Design Scheme for Detecting Defective AC-Coupled Capacitors in Differential Signaling von Sanghyeon Baeg, Sanghyeon Baeg

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DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package von Waqar, Muhammad, Bak, Geunyong, Kwon, Junhyeong, Baeg, Sanghyeon

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Temporal and frequency characteristic analysis of margin-related failures caused by an intermittent nano-scale fracture of the solder ball in a BGA package device von Lee, Hosung, Baeg, Sanghyeon, Hua, Nelson, Wen, ShiJie

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A di/dt Compensation Technique in Delay Testing by Disconnecting Power Pins von Baeg, Sanghyeon

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Delay Fault Coverage Enhancement by Partial Clocking for Low-Power Designs With Heavily Gated Clocks von Sanghyeon Baeg, Sanghyeon Baeg

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Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation von Yun, Donghyuk, Park, Myungsang, Bak, Geunyong, Baeg, Sanghyeon, Wen, Shi-Jie

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Minimizing Soft Errors in TCAM Devices: A Probabilistic Approach to Determining Scrubbing Intervals von Sanghyeon Baeg, ShiJie Wen, Wong, Richard

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Signal characteristic and test exploitation for intermittent nanometer-scale cracks von Lee, Hosung, Baeg, Sanghyeon

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Experimental Exploitation of Random and Deterministic Data Patterns for Stringent DDR4 I/O Timing Margins von Lee, Kiseok, Li, Tan, Baeg, Sanghyeon

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Statistical distributions of row-hammering induced failures in DDR3 components von Park, Kyungbae, Yun, Donghyuk, Baeg, Sanghyeon

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Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam von Chulseung Lim, Hyun Soo Jeong, Geunyong Bak, Sanghyeon Baeg, Shi-Jie Wen, Wong, Richard

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Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3× nm technology von Park, Kyungbae, Lim, Chulseung, Yun, Donghyuk, Baeg, Sanghyeon

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