Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films von Lee, Joohwi, Cho, Deok-Yong, Jung, Jisim, Ki Kim, Un, Ho Rha, Sang, Seong Hwang, Cheol, Choi, Jung-Hae

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Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor von Ho Rha, Sang, Ki Kim, Un, Jung, Jisim, Suk Hwang, Eun, Choi, Jung-Hae, Seong Hwang, Cheol

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Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer von Ho Rha, Sang, Ki Kim, Un, Jung, Jisim, Suk Hwang, Eun, Jun Lee, Seung, Jeon, Woojin, Woo Yoo, Yeon, Choi, Jung-Hae, Seong Hwang, Cheol

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Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories von Eom, Taeyong, Choi, Seol, Choi, Byung Joon, Lee, Min Hwan, Gwon, Taehong, Rha, Sang Ho, Lee, Woongkyu, Kim, Moo-Sung, Xiao, Manchao, Buchanan, Iain, Cho, Deok-Yong, Hwang, Cheol Seong

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Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs von Rha, Sang Ho, Jung, Jisim, Jung, Yoonsoo, Chung, Yoon Jang, Kim, Un Ki, Hwang, Eun Suk, Park, Byoung Keon, Park, Tae Joo, Choi, Jung-Hae, Hwang, Cheol Seong

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Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics von JUNG, Hyung-Suk, LEE, So-Ah, LEE, Nae-In, CHEOL SEONG HWANG, RHA, Sang-Ho, SANG YOUNG LEE, HYO KYEOM KIM, DO HYUN KIM, KYU HWAN OH, PARK, Jung-Min, KIM, Weon-Hong, SONG, Min-Woo

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Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process von Ho Rha, Sang, Jung, Jisim, Soo Jung, Yoon, Jang Chung, Yoon, Ki Kim, Un, Suk Hwang, Eun, Keon Park, Byoung, Joo Park, Tae, Choi, Jung-Hae, Seong Hwang, Cheol

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The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application von Sim Jung, Ji, Rha, Sang-Ho, Ki Kim, Un, Jang Chung, Yoon, Soo Jung, Yoon, Choi, Jung-Hae, Seong Hwang, Cheol

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The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application von Seo, Minha, Ho Rha, Sang, Keun Kim, Seong, Hwan Han, Jeong, Lee, Woongkyu, Han, Sora, Seong Hwang, Cheol

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High rate dry etching of InGaZnO by BCl 3 /O 2 plasma von Park, Wanjae, Whang, Ki-Woong, Gwang Yoon, Young, Hwan Kim, Jeong, Rha, Sang-Ho, Seong Hwang, Cheol

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Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy von Lee, Min Hwan, Kim, Kyung Min, Song, Seul Ji, Rha, Sang Ho, Seok, Jun Yeong, Jung, Ji Sim, Kim, Gun Hwan, Yoon, Jung Ho, Hwang, Cheol Seong

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox von Rha, Sang Ho, Kim, Un Ki, Jung, Jisim, Kim, Hyo Kyeom, Jung, Yoon Soo, Hwang, Eun Suk, Chung, Yoon Jang, Lee, Mijung, Choi, Jung-Hae, Hwang, Cheol Seong

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7 von SANG HO RHA, UN KI KIM, JUNG, Jisim, HYO KYEOM KIM, YOON SOO JUNG, EUN SUK HWANG, YOON JANG CHUNG, LEE, Mijung, CHOI, Jung-Hae, CHEOL SEONG HWANG

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High rate dry etching of InGaZnO by BCl3/O2 plasma von Park, Wanjae, Whang, Ki-Woong, Gwang Yoon, Young, Hwan Kim, Jeong, Rha, Sang-Ho, Seong Hwang, Cheol

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Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics von JUNG, Hyung-Suk, RHA, Sang-Ho, SONG, Min-Woo, LEE, Nae-In, HYO KYEOM KIM, JEONG HWAN KIM, WON, Seok-Jun, LEE, Joohwi, SANG YOUNG LEE, CHEOL SEONG HWANG, PARK, Jung-Min, KIM, Weon-Hong

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Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics von Jung, Hyung-Suk, Lee, So-Ah, Rha, Sang-ho, Lee, Sang Young, Kim, Hyo Kyeom, Kim, Do Hyun, Oh, Kyu Hwan, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In, Hwang, Cheol Seong

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Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics von Jung, Hyung-Suk, Rha, Sang-Ho, Kim, Hyo Kyeom, Kim, Jeong Hwan, Won, Seok-Jun, Lee, Joohwi, Lee, Sang Young, Hwang, Cheol Seong, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In

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The Effect of Light Illumination on Transfer Curve and Stability of Amorphous Hf-In-ZnO Thin Film Transistors von Kim, Jeong Hwan, Kim, Un Ki, Chung, Yoon Jang, Rha, Sang-Ho, Jung, Hyung-Suk, Lee, Sang Young, Jung, Ji Sim, Lee, Sangyun, Hwang, Cheol Seong

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Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films von Jeon, Woojin, Rha, Sang Ho, Lee, Woongkyu, Yoo, Yeon Woo, An, Cheol Hyun, Jung, Kwang Hwan, Kim, Seong Keun, Hwang, Cheol Seong

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Improved etching characteristics of silicon-dioxide by enhanced inductively coupled plasma von O, Beom-hoan, Park, Se-Geun, Rha, Sang-Ho, Jeong, Jae-Seong

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