Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications von Chang, Sung‐Jae, Jeong, Hyeon‐Seok, Jung, Hyun‐Wook, Choi, Su‐Min, Choi, Il‐Gyu, Noh, Youn‐Sub, Kim, Seong‐Il, Lee, Sang‐Heung, Ahn, Ho‐Kyun, Kang, Dong Min, Kim, Dae‐Hyun, Lim, Jong‐Won

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Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study von Jang, Kyu-Won, Hwang, In-Tae, Kim, Hyun-Jung, Lee, Sang-Heung, Lim, Jong-Won, Kim, Hyun-Seok

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E-band low-noise amplifier MMIC with impedance-controllable filter using SiGe 130-nm BiCMOS technology von Chang, Woojin, Lee, Jong‐Min, Kim, Seong‐Il, Lee, Sang‐Heung, Kang, Dong Min

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A 28.5-32-GHz Fast Settling Multichannel PLL Synthesizer for 60-GHz WPAN Radio von LEE, Ja-Yol, LEE, Sang-Heung, KIM, Haecheon, YU, Hyun-Kyu

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Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure von Kwak, Hyeon-Tak, Chang, Seung-Bo, Kim, Hyun-Jung, Jang, Kyu-Won, Yoon, Hyung, Lee, Sang-Heung, Lim, Jong-Won, Kim, Hyun-Seok

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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator von Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Bae, Youngho, Jung, Hyun-Wook, Choi, Il-Gyu, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Kang, Dong-Min, Lim, Jong-Won

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High Figure-of-Merit ( }^} / } ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier von Lee, Jun-Hyeok, Lisesivdin, Sefer Bora, Lee, Jung-Hee, Ju, Jeong-Min, Atmaca, Gokhan, Kim, Jeong-Gil, Kang, Seung-Hyeon, Lee, Yong Soo, Lee, Sang-Heung, Lim, Jong-Won, Kwon, Ho-Sang

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Growth of 10 nm‐thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance von Kim, Jeong‐Gil, Im, Ki‐Sik, Won, Chul‐Ho, Kang, Seung‐Hyeon, Lee, Sang‐Heung, Lim, Jong‐Won, Kim, Ji Heon, Lee, Jung‐Hee

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Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-... von Hwang, In-Tae, Jang, Kyu-Won, Kim, Hyun-Jung, Lee, Sang-Heung, Lim, Jong-Won, Yang, Jin-Mo, Kwon, Ho-Sang, Kim, Hyun-Seok

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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer von Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Lee, Jung-Hee, Bae, Youngho, Jung, Hyun-Wook, Kang, Soo Cheol, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won

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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors von Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Kim, Seung Mo, Lee, Sang Kyung, Lee, Byoung Hun, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won

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Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment von Lim, Jong-Won, Ahn, Ho-Kyun, Kim, Seong-il, Kang, Dong-Min, Lee, Jong-Min, Min, Byoung-Gue, Lee, Sang-Heung, Yoon, Hyung-Sup, Ju, Chull-Won, Kim, Haecheon, Mun, Jae-Kyoung, Nam, Eun-Soo, Park, Hyung-Moo

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A Single-Chip 2.5-Gb/s Burst-Mode Optical Receiver With Wide Dynamic Range von Lee, Sang-Heung, Kim, Jongdeog, Le, Quan, Lee, Munseob, Kim, Haecheon, Park, Chang-Su

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Polycrystalline silicon-germanium heating layer for phase-change memory applications von Lee, Seung-Yun, Choi, Kyu-Jeong, Ryu, Sang-Ouk, Yoon, Sung-Min, Lee, Nam-Yeal, Park, Young-Sam, Kim, Sang-Hoon, Lee, Sang-Heung, Yu, Byoung-Gon

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Effect of Fluoride‐based Plasma Treatment on the Performance of AlGaN/GaN MISHFET von Ahn, Ho‐Kyun, Kim, Hae‐Cheon, Kang, Dong‐Min, Kim, Sung‐Il, Lee, Jong‐Min, Lee, Sang‐Heung, Min, Byoung‐Gue, Yoon, Hyoung‐Sup, Kim, Dong‐Young, Lim, Jong‐Won, Kwon, Yong‐Hwan, Nam, Eun‐Soo, Park, Hyoung‐Moo, Lee, Jung‐Hee

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A 48 GHz 196 dB-FOM LC VCO With Double Cap-Degeneration Negative-Resistance Cell von LEE, Ja-Yol, KIM, Haecheon, LEE, Sang-Heung, YU, Hyun-Kyu

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A 1-12-GHz variable-gain low-noise amplifier MMIC using 0.25-μm SiGe BiCMOS technology von Chang, Woojin, Lee, Sang-Heung, Mun, Jae-Kyoung, Nam, Eunsoo

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Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier von Kim, Jeong-Gil, Kang, Seung-Hyeon, Janicki, Łukasz, Lee, Jun-Hyeok, Ju, Jeong-Min, Kim, Kyung-Wan, Lee, Yong-Soo, Lee, Sang-Heung, Lim, Jong-Won, Kwon, Ho-Sang, Lee, Jung-Hee

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Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching von Son, Dong-Hyeok, Jo, Young-Woo, Won, Chul-Ho, Lee, Jun-Hyeok, Seo, Jae Hwa, Lee, Sang-Heung, Lim, Jong-Won, Kim, Ji Heon, Kang, In Man, Cristoloveanu, Sorin, Lee, Jung-Hee

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A 60 GHz mixer using 0.25 μm SiGe BiCMOS technology von Lee, Sang-Heung, Lee, Ja-Yol, Kim, Haecheon

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